MBRB2080CT [DIODES]
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER; 20A高压肖特基整流器
| 型号： | MBRB2080CT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRB2070CT - MBRB20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
ꢁ
Guard Ring Die Construction for
Transient Protection
ꢁ
ꢁ
ꢁ
Low Power Loss, High Efficiency
High Surge Capability
D2PAK
Min
E
High Current Capability and Low Forward
Voltage Drop
Dim
A
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
G
H
A
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
ꢁ
ꢁ
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
4
B
C
J
Plastic Material: UL Flammability
Classification Rating 94V-0
D
B
1
2
3
E
G
H
M
Mechanical Data
J
D
K
Case: D2PAK, Molded Plastic
K
ꢁ
ꢁ
C
L
L
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
M
PIN 1
PIN 3
ꢁ
ꢁ
ꢁ
Polarity: As Marked on Body
Weight: 1.7 grams (approx)
Marking: Type Number
PIN 2 & 4
All Dimensions in mm
@ TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBRB
2070CT
MBRB
2080CT
MBRB
2090CT
MBRB
20100CT
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
70
49
80
56
90
63
100
70
V
VR(RMS)
IO
RMS Reverse Voltage
V
A
Average Rectified Output Current
(Note 1)
20
@ TC = 110ꢀC
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
@ IF = 10A, Tj = 125ꢀC
0.75
0.85
0.85
0.95
@ IF = 10A, Tj = 25ꢀC
@ IF = 20A, Tj = 125ꢀC
@ IF = 20A, Tj = 25ꢀC
VFM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TA = 25ꢀC
@ TA = 125ꢀC
0.1
100
IRM
mA
Cj
RꢂJc
dV/dt
Tj
Typical Junction Capacitance (Note 2)
275
2.0
pF
ꢀC/W
V/ꢃs
ꢀC
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change @ rated V
10000
R
Operating Temperature Range
Storage Temperature Range
-65 to +150
-65 to +175
TSTG
ꢀC
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
DS30177 Rev. B-2
1 of 2
MBRB2070CT-MBRB20100CT
20
16
12
100
10
8
4
1.0
0.1
TJ = 25°C
Pulse width = 300µs
2% duty cycle
0
0.1 0.2 0.3 0.4 0.5 0.6
0.8
1.0
0.7
0.9
0
50
100
150
TC, CASE TEMPERATURE (°C)
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Fwd Current Derating Curve
300
250
200
150
100
10
TJ = 1250C
TJ = 750C
1.0
0.1
100
TJ = 250C
0.01
50
0
0.001
20
40
VR, REVERSE VOLTAGE (V)
60
0
80
120
100
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 4 Max Non-Repetitive Surge Current
Fig. 3 Typical Reverse Characteristics
1000
TJ = 25°C
Pulse width = 300µs
2% duty cycle
f = 1MHz
500
200
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
DS30177 Rev. B-2
2 of 2
MBRB2070CT-MBRB20100CT
相关型号：
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, D2PACK-3/2
MCC
MBRB2080CT-GT4
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, GREEN, PLASTIC, D2PAK-3
SENSITRON
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