MMBD4448HTCT-13 [DIODES]
Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon;
| 型号： | MMBD4448HTCT-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon 光电二极管 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD4448HT /HTA /HTC /HTS
SURFACE MOUNT FAST SWITCHING DIODE
Features
·
·
·
·
Ultra-Small Surface Mount Package
Fast Switching Speed
SOT-523
TOP VIEW
Dim Min Max Typ
For General Purpose Switching Applications
High Conductance
A
B
C
D
G
H
J
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
B
C
¾
¾
0.50
Mechanical Data
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
A
G
H
·
·
Case: SOT-523, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
K
L
K
J
M
·
·
·
·
Polarity: See Diagram
N
M
N
Marking: See Diagram
Weight: 0.002 grams (approx.)
Ordering Information, see Sheet 2
D
L
All Dimensions in mm
MMBD4448HTS Marking: AB
MMBD4448HTA Marking: A6
@ T = 25°C unless otherwise specified
MMBD4448HTC Marking: A7
MMBD4448HT Marking: A3
Maximum Ratings
A
Characteristic
Symbol
Value
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
80
VR(RMS)
IFM
RMS Reverse Voltage
57
V
Forward Continuous Current
Average Rectified Output Current
500
250
mA
mA
IO
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
4.0
2.0
IFSM
A
Pd
Power Dissipation (Note 1)
150
833
mW
°C/W
°C
RqJA
Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Tj , TSTG
-65 to +150
@ T = 25°C unless otherwise specified
A
Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Test Condition
V(BR)R
Reverse Breakdown Voltage (Note 2)
80
¾
V
IR = 2.5ma
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
0.62
¾
¾
0.72
0.855
1.0
VF
Forward Voltage (Note 2)
Leakage Current (Note 2)
V
¾
1.25
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
100
50
30
25
nA
mA
mA
nA
IR
¾
VR = 6V, f = 1.0MHz
VR = 6V, IF = 5mA
Cj
trr
Junction Capacitance
¾
¾
3.5
4.0
pF
ns
Reverse Recovery Time
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
2. Short duration pulse test used to minimize self-heating effect.
DS30263 Rev. B-2
1 of 2
MMBD4448HT /HTA /HTC /HTS
(Note 2)
Ordering Information
Device
Packaging
SOT-523
SOT-523
SOT-523
SOT-523
Shipping
MMBD4448HT-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMBD4448HTAT-7
MMBD4448HTCT-7
MMBD4448HTST-7
Notes:
3. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1000
10,000
1000
100
100
10
1.0
10
0.1
VR = 20V
1
0.01
0
100
200
0
1
2
Tj, JUNCTION TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
Fig. 2 Leakage Current vs Junction Temperature
DS30263 Rev. B-2
2 of 2
MMBD4448HT /HTA /HTC /HTS
相关型号：
MMBD4448HTS-13
Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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