MMBT4126_2 [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | MMBT4126_2 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT4124)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
A
SOT-23
C
Dim
A
B
C
D
E
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
B
C
TOP VIEW
B
E
D
G
E
Mechanical Data
H
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking (See Page 3): K2B
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
K
M
G
H
J
J
•
•
•
•
L
C
K
L
M
α
•
•
•
E
B
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
-25
-25
-4.0
-200
300
417
Unit
V
V
V
mA
mW
PD
Thermal Resistance, Junction to Ambient (Note 1)
°C/W
°C
Rθ
JA
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-25
-25
-4.0
⎯
V
V
V
nA
nA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
-50
-50
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
Emitter Cutoff Current
IEBO
⎯
ON CHARACTERISTICS (Note 3)
360
⎯
-0.40
-0.95
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
120
60
DC Current Gain
hFE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
4.5
10
pF
pF
Cobo
Cibo
⎯
⎯
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Capacitance
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
120
250
⎯
480
⎯
hfe
fT
⎯
MHz
dB
NF
4.0
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30106 Rev. 8 - 2
1 of 3
MMBT4126
© Diodes Incorporated
www.diodes.com
100
10
1
350
300
250
200
150
100
50
0
200
0
175
25
50
150
100 125
75
1
0.1
100
10
TA, AMBIENT TEMPERATURE (°C)
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
10
1,000
1
100
0.1
10
1
0.01
1
1,000
10
0.1
10
100
1
100
1,000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
I
C
= 10
I
B
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30106 Rev. 8 - 2
2 of 3
www.diodes.com
MMBT4126
© Diodes Incorporated
Ordering Information (Note 5)
Packaging
Shipping
Device
SOT-23
3000/Tape & Reel
MMBT4126-7-F
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K2B
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30106 Rev. 8 - 2
3 of 3
MMBT4126
© Diodes Incorporated
www.diodes.com
相关型号：
MMBT4126_NL
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SOT-23, 3 PIN
FAIRCHILD
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