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MMBT4403 [DIODES]

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
MMBT4403
型号： MMBT4403
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PNP小信号表面贴装晶体管

晶体 晶体管
文件： 总3页 (文件大小：57K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MMBT4403  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Type Available  
(MMBT4401)  
Ideal for Medium Power Amplification and  
Switching  
SOT-23  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
C
·
B
C
B
C
TOP VIEW  
E
B
Mechanical Data  
D
G
D
E
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking (See Page 2): K2T  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
E
H
G
H
K
M
J
·
·
L
J
K
C
·
·
·
·
L
M
a
E
B
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBT4403  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-40  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
-600  
mA  
mW  
°C/W  
°C  
Pd  
300  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30058 Rev. 3 - 2  
1 of 3  
MMBT4403  
www.diodes.com  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC = -100mA, IE = 0  
-40  
-40  
-5.0  
¾
¾
¾
V
V
IC = -1.0mA, IB = 0  
IE = -100mA, IC = 0  
¾
V
VCE = -35V, VEB(OFF) = -0.4V  
VCE = -35V, VEB(OFF) = -0.4V  
-100  
-100  
nA  
nA  
IBL  
Base Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
IC = -100µA, VCE = -1.0V  
IC = -1.0mA, VCE = -1.0V  
30  
60  
100  
100  
20  
¾
¾
¾
300  
¾
IC  
= -10mA, VCE = -1.0V  
hFE  
DC Current Gain  
¾
IC = -150mA, VCE = -2.0V  
IC = -500mA, VCE = -2.0V  
IC = -150mA, IB = -15mA  
-0.40  
-0.75  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
¾
V
V
I
C = -500mA, IB = -50mA  
IC = -150mA, IB = -15mA  
IC = -500mA, IB = -50mA  
-0.75  
¾
-0.95  
-1.30  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = -10V, f = 1.0MHz, IE = 0  
VEB = -0.5V, f = 1.0MHz, IC = 0  
Ccb  
Ceb  
hie  
¾
¾
8.5  
30  
pF  
pF  
Input Capacitance  
Input Impedance  
1.5  
0.1  
60  
15  
kW  
x 10-4  
hre  
hfe  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
8.0  
500  
100  
V
CE = -10V, IC = -1.0mA,  
f = 1.0kHz  
¾
hoe  
1.0  
mS  
V
CE = -10V, IC = -20mA,  
fT  
Current Gain-Bandwidth Product  
200  
¾
MHz  
f = 100MHz  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
¾
¾
¾
¾
15  
20  
ns  
ns  
ns  
ns  
V
V
CC = -30V, IC = -150mA,  
BE(off) = -2.0V, IB1 = -15mA  
Rise Time  
ts  
tf  
Storage Time  
225  
30  
V
CC = -30V, IC = -150mA,  
IB1 = IB2 = -15mA  
Fall Time  
(Note 3)  
Ordering Information  
Device  
Packaging  
Shipping  
MMBT4403-7  
SOT-23  
3000/Tape & Reel  
Note:  
2. Short duration pulse test used to minimize self-heating effect.  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K2T = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
K2T  
M = Month ex: 9 = September  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30058 Rev. 3 - 2  
2 of 3  
MMBT4403  
www.diodes.com  
30  
20  
Cibo  
10  
5.0  
1.0  
Cobo  
-0.1  
-1.0  
-30  
-10  
REVERSE VOLTS (V)  
Fig. 1 Capacitances (Typical)  
1.6  
1.4  
1.2  
IC = 10mA  
IC = 1mA  
IC = 100mA  
IC = 30mA  
IC = 300mA  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
0.001  
0.01  
0.1  
10  
100  
IB BASE CURRENT (mA)  
Fig. 2 Typical Collector Saturation Region  
DS30058 Rev. 3 - 2  
3 of 3  
MMBT4403  
www.diodes.com  

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