MMBTA05 [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
| 型号： | MMBTA05 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available
(MMBTA55 / MMBTA56)
Ideal for Medium Power Amplification and
Switching
SOT-23
Dim
A
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
·
C
B
TOP VIEW
B
C
C
Mechanical Data
D
B
E
E
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA05 Marking: K1G, K1H, R1H
MMBTA06 Marking: K1G, R1G
Weight: 0.008 grams (approx.)
D
G
E
G
H
H
·
·
·
·
J
M
K
K
J
L
L
M
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
MMBTA05
MMBTA06
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
60
60
80
80
Collector-Emitter Voltage
V
Emitter-Base Voltage
4.0
500
350
357
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
mA
mW
K/W
°C
Pd
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
MMBTA05
MMBTA06
60
80
V(BR)CBO
I
I
C = 100mA, IE = 0
¾
V
Collector-Emitter Breakdown Voltage
MMBTA05
MMBTA06
60
80
C = 1.0mA, IB = 0
V(BR)CEO
V(BR)EBO
ICBO
¾
¾
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 100mA, IC = 0
4.0
MMBTA05
MMBTA06
VCB = 60V, IE = 0
CB = 80V, IE = 0
¾
100
nA
V
Collector Cutoff Current
MMBTA05
MMBTA06
VCE = 60V, IBO = 0V
CE = 80V, IBO = 0V
ICES
¾
100
nA
V
ON CHARACTERISTICS (Note 2)
IC
= 10mA, VCE = 1.0V
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain
100
¾
¾
I
C = 100mA, VCE = 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
¾
¾
0.25
1.2
V
V
VCE = 2.0V, IC = 10mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
100
¾
MHz
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30037 Rev. C-2
1 of 2
MMBTA05 / MMBTA06
1000
100
10
TA = +125ºC
VCE = 1V
350
300
250
TA = -40ºC
TA = +25ºC
200
150
100
50
0
1
200
0
175
25
50
150
10
75 100 125
1
100
1000
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Typical Pulsed Current Gain
vs. Collector Current
2.0
1.8
1.6
1.4
1.2
IC = 30mA
1.0
0.8
0.6
0.4
0.2
IC = 10mA
IC = 100mA
IC = 1mA
0
1
0.001
0.01
0.1
10
100
IB, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
10
VCB = 80V
1
0.1
0.01
25
50
75
100
125
TA, AMBIENT TEMPERATURE (ºC)
Fig. 4 Typical Collector-Cutoff Current
vs. Ambient Temperature
DS30037 Rev. C-2
2 of 2
MMBTA05 / MMBTA06
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