MMBTA14 [DIODES]
NPN SURFACE MOUNT DARLINGTON TRANSISTOR; NPN表面贴装达林顿晶体管
| 型号： | MMBTA14 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA13 / MMBTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available
(MMBTA63 / MMBTA64)
Ideal for Medium Power Amplification and
Switching
High Current Gain
SOT-23
A
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
C
·
·
B
B
C
C
TOP VIEW
B
E
D
Mechanical Data
·
·
D
G
E
E
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
Terminal Connections: See Diagram
MMBTA13 Marking (See Page 2): K2D, K3D
MMBTA14 Marking (See Page 2): K3D
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
H
G
H
K
M
J
·
·
L
J
C
K
L
·
·
·
·
·
M
a
E
B
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
MMBTA13
MMBTA14
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
30
30
10
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
300
300
417
mA
mW
°CW
°C
Pd
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CEO
ICBO
IC = 100mA VBE = 0V
VCB = 30V, IE = 0
VEB = 10V, IC = 0
30
¾
¾
¾
V
100
100
nA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
IC
IC
=
=
10mA, VCE = 5.0V
10mA, VCE = 5.0V
5,000
MMBTA13
MMBTA14
MMBTA13
MMBTA14
10,000
10,000
20,000
hFE
¾
¾
IC = 100mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
IC = 100mA, IB = 100mA
¾
¾
1.5
2.0
V
V
IC = 100mA, VCE = 5.0V
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo
Cibo
8.0 Typical
15 Typical
pF
pF
Input Capacitance
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
125
¾
MHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30047 Rev. 4 - 2
1 of 2
MMBTA13 / MMBTA14
www.diodes.com
(Note 3)
Ordering Information
Device
Packaging
Shipping
MMBTA13-7
MMBTA14-7
SOT-23
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KxD = Product Type Marking Code, ex: K2D = MMBTA13
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KxD
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30047 Rev. 4 - 2
2 of 2
www.diodes.com
MMBTA13 / MMBTA14
相关型号：
MMBTA14L99Z
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
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