MMDT3946-7R-F [DIODES]

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MAX34334CSE前5页PDF页面详情预览
MMDT3946
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
Complementary Pair
One 3904-Type NPN,
One 3906-Type PNP
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and
Switching
Ultra-Small Surface Mount Package
K
A
C
2
B
1
E
1
SOT-363
Dim
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
A
B
C
D
F
M
E
2
B
2
C
1
G
H
Mechanical Data
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K46
Ordering & Date Code Information: See Page
2
Weight: 0.006 grams (approx.)
J
D
C
2
B
1
E
1
0.65 Nominal
H
F
L
J
K
L
M
a
E
2
B
2
C
1
All Dimensions in mm
E
1
, B
1
, C
1
= PNP3906 Section
E
2
, B
2
, C
2
= NPN3904 Section
Maximum Ratings, NPN 3904 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1, 2)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
NPN 3904 Section
60
40
6.0
200
200
625
Unit
V
V
V
mA
mW
°C/W
Maximum Ratings, PNP 3906 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
PNP 3906 Section
-40
-40
-5.0
-200
200
625
Unit
V
V
V
mA
mW
°C/W
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
DS30123 Rev. 4 - 2
1 of 5
www.diodes.com
MMDT3946
Electrical Characteristics, NPN 3904 Section
Characteristic
OFF CHARACTERISTICS
(Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 3)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Symbol
@ T
A
= 25°C unless otherwise specified
Min
60
40
5.0
¾
¾
40
70
100
60
30
¾
0.65
¾
¾
¾
1.0
0.5
100
1.0
300
¾
Max
¾
¾
6.0
50
50
¾
¾
300
¾
¾
0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40
¾
5.0
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10mA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
=
I
C
= 1.0mA, V
CE
=
I
C
= 10mA, V
CE
=
I
C
= 50mA, V
CE
=
I
C
= 100mA, V
CE
=
1.0V
1.0V
1.0V
1.0V
1.0V
DC Current Gain
h
FE
¾
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
V
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
pF
pF
kW
x 10
-4
¾
mS
MHz
dB
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100mA,
R
S
= 1.0kW, f = 1.0kHz
t
d
t
r
t
s
t
f
¾
¾
¾
¾
35
35
200
50
ns
ns
ns
ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
3. Short duration test pulse used to minimize self-heating effect.
DS30123 Rev. 4 - 2
2 of 5
www.diodes.com
MMDT3946
Electrical Characteristics, PNP 3906 Section
Characteristic
OFF CHARACTERISTICS
(Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 3)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Symbol
@ T
A
= 25°C unless otherwise specified
Min
-40
-40
-5.0
¾
¾
60
80
100
60
30
¾
-0.65
¾
¾
¾
2.0
0.1
100
3.0
250
¾
Max
¾
¾
¾
-50
-50
¾
¾
300
¾
¾
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
¾
4.0
Unit
V
V
V
nA
nA
Test Condition
I
C
= -10mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10mA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CE
= -30V, V
EB(OFF)
= -3.0V
I
C
= -100µA, V
CE
=
I
C
= -1.0mA, V
CE
=
I
C
= -10mA, V
CE
=
I
C
= -50mA, V
CE
=
I
C
= -100mA, V
CE
=
-1.0V
-1.0V
-1.0V
-1.0V
-1.0V
DC Current Gain
h
FE
¾
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
V
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
pF
pF
kW
x 10
-4
¾
mS
MHz
dB
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100mA,
R
S
= 1.0kW, f = 1.0kHz
t
d
t
r
t
s
t
f
¾
¾
¾
¾
35
35
225
75
ns
ns
ns
ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Ordering Information
Device
MMDT3946-7
Notes:
(Note 4)
Packaging
SOT-363
Shipping
3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K46
K46 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30123 Rev. 4 - 2
3 of 5
www.diodes.com
YM
MMDT3946
15
f = 1MHz
300
250
200
150
100
50
C
IBO
, INPUT CAPACITANCE (pF)
C
OBO
, OUTPUT CAPACITANCE (pF)
350
P
D
, POWER DISSIPATION (mW)
10
5
Cibo
Cobo
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
0
0.1
1
10
100
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage (NPN-3904)
1000
V
CE(SAT)
, COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1
I
C
I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= 125°C
100
T
A
= -25°C
T
A
= +25°C
0.1
10
V
CE
= 1.0V
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current (NPN-3904)
10
0.01
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
100
C
IBO
, INPUT CAPACITANCE (pF)
C
OBO
, OUTPUT CAPACITANCE (pF)
I
C
I
B
= 10
f = 1MHz
V
BE(SAT)
, BASE-EMITTER (V)
SATURATION VOLTAGE
1
10
Cibo
0.1
0.1
Cobo
1
10
100
1000
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 6, Input and Output Capacitance vs.
Collector-Base Voltage (PNP-3906)
DS30123 Rev. 4 - 2
4 of 5
www.diodes.com
MMDT3946
1000
V
CE(SAT)
, COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
10
I
C
I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= 125°C
1
100
T
A
= -25°C
T
A
= +25°C
0.1
10
V
CE
= 1.0V
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7, Typical DC Current Gain vs
Collector Current (PNP-3906)
0.01
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
1.0
V
BE(SAT)
, BASE-EMITTER (V)
SATURATION VOLTAGE
0.9
0.8
0.7
0.6
I
C
I
B
= 10
0.5
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter
Saturation Voltage vs. Collector Current (PNP-3906)
DS30123 Rev. 4 - 2
5 of 5
www.diodes.com
MMDT3946