首页 > MMDT3946-7R-F

MMDT3946-7R-F

更新时间：2025-07-13 13:08:47
品牌：DIODES
描述：暂无描述

PDF下载

中文翻译

免费 PCB/SMT

MMDT3946-7R-F 概述

暂无描述

MMDT3946-7R-F 数据手册

通过下载MMDT3946-7R-F数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
MMDT3946  
COMPLEMENTARY NPN / PNP  
SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Complementary Pair  
One 3904-Type NPN,  
One 3906-Type PNP  
Epitaxial Planar Die Construction  
Ideal for Low Power Amplification and  
Switching  
A
SOT-363  
C2  
B1  
E1  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
·
·
C
B
B
E2  
B2  
C1  
C
·
Ultra-Small Surface Mount Package  
G
H
D
0.65 Nominal  
Mechanical Data  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
M
H
·
·
Case: SOT-363, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
J
L
D
F
K
0.90  
0.25  
0.10  
0°  
·
·
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
C2  
B1  
E1  
L
M
a
·
·
·
Terminal Connections: See Diagram  
Marking (See Page 2): K46  
Ordering & Date Code Information: See Page  
2
E2  
B2  
C1  
All Dimensions in mm  
E1, B1, C1 = PNP3906 Section  
E2, B2, C2 = NPN3904 Section  
·
Weight: 0.006 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, NPN 3904 Section  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
NPN 3904 Section  
Unit  
V
60  
40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6.0  
200  
200  
625  
V
Collector Current - Continuous (Note 1, 2)  
Power Dissipation (Note 1)  
mA  
mW  
°C/W  
Pd  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, PNP 3906 Section  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
PNP 3906 Section  
Unit  
V
-40  
-40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5.0  
-200  
200  
625  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1, 2)  
Thermal Resistance, Junction to Ambient (Note 1)  
mA  
mW  
°C/W  
Pd  
RqJA  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Maximum combined dissipation.  
DS30123 Rev. 4 - 2  
1 of 5  
MMDT3946  
www.diodes.com  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics, NPN 3904 Section  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC = 10mA, IE = 0  
60  
40  
5.0  
¾
¾
¾
V
V
IC = 1.0mA, IB = 0  
IE = 10mA, IC = 0  
6.0  
50  
50  
V
VCE = 30V, VEB(OFF) = 3.0V  
VCE = 30V, VEB(OFF) = 3.0V  
nA  
nA  
IBL  
Base Cutoff Current  
¾
ON CHARACTERISTICS (Note 3)  
IC = 100µA, VCE = 1.0V  
IC = 1.0mA, VCE = 1.0V  
40  
70  
¾
¾
300  
¾
IC  
IC  
=
=
10mA, VCE = 1.0V  
50mA, VCE = 1.0V  
hFE  
DC Current Gain  
100  
60  
¾
IC = 100mA, VCE = 1.0V  
30  
¾
IC = 10mA, IB = 1.0mA  
0.20  
0.30  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
¾
V
V
I
C = 50mA, IB = 5.0mA  
IC = 10mA, IB = 1.0mA  
IC = 50mA, IB = 5.0mA  
0.65  
¾
0.85  
0.95  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 5.0V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
Cobo  
Cibo  
hie  
¾
¾
4.0  
8.0  
10  
pF  
pF  
Input Capacitance  
Input Impedance  
1.0  
0.5  
100  
1.0  
kW  
x 10-4  
hre  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
8.0  
400  
40  
V
CE = 10V, IC = 1.0mA,  
f = 1.0kHz  
hfe  
¾
hoe  
mS  
V
CE = 20V, IC = 20mA,  
fT  
Current Gain-Bandwidth Product  
Noise Figure  
300  
¾
MHz  
dB  
f = 100MHz  
V
R
CE = 5.0V, IC = 100mA,  
S = 1.0kW, f = 1.0kHz  
NF  
¾
5.0  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
¾
¾
¾
¾
35  
35  
ns  
ns  
ns  
ns  
V
CC = 3.0V, IC = 10mA,  
VBE(off) = - 0.5V, IB1 = 1.0mA  
Rise Time  
ts  
tf  
Storage Time  
200  
50  
VCC = 3.0V, IC = 10mA,  
IB1 = IB2 = 1.0mA  
Fall Time  
Note:  
3. Short duration test pulse used to minimize self-heating effect.  
DS30123 Rev. 4 - 2  
2 of 5  
www.diodes.com  
MMDT3946  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics, PNP 3906 Section  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC = -10mA, IE = 0  
-40  
-40  
-5.0  
¾
¾
¾
V
V
IC = -1.0mA, IB = 0  
IE = -10mA, IC = 0  
¾
V
VCE = -30V, VEB(OFF) = -3.0V  
VCE = -30V, VEB(OFF) = -3.0V  
-50  
-50  
nA  
nA  
IBL  
Base Cutoff Current  
¾
ON CHARACTERISTICS (Note 3)  
IC = -100µA, VCE = -1.0V  
IC = -1.0mA, VCE = -1.0V  
60  
80  
¾
¾
300  
¾
IC  
IC  
=
=
-10mA, VCE = -1.0V  
-50mA, VCE = -1.0V  
hFE  
DC Current Gain  
100  
60  
¾
IC = -100mA, VCE = -1.0V  
30  
¾
IC = -10mA, IB = -1.0mA  
-0.25  
-0.40  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
¾
V
V
I
C = -50mA, IB = -5.0mA  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.65  
¾
-0.85  
-0.95  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = -5.0V, f = 1.0MHz, IE = 0  
VEB = -0.5V, f = 1.0MHz, IC = 0  
Cobo  
Cibo  
hie  
¾
¾
4.5  
10  
pF  
pF  
Input Capacitance  
Input Impedance  
2.0  
0.1  
100  
3.0  
12  
kW  
x 10-4  
hre  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
10  
V
CE = 10V, IC = 1.0mA,  
f = 1.0kHz  
hfe  
400  
60  
¾
hoe  
mS  
V
CE = -20V, IC = -10mA,  
fT  
Current Gain-Bandwidth Product  
Noise Figure  
250  
¾
MHz  
dB  
f = 100MHz  
V
R
CE = -5.0V, IC = -100mA,  
S = 1.0kW, f = 1.0kHz  
NF  
¾
4.0  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
¾
¾
¾
¾
35  
35  
ns  
ns  
ns  
ns  
V
CC = -3.0V, IC = -10mA,  
VBE(off) = 0.5V, IB1 = -1.0mA  
Rise Time  
ts  
tf  
Storage Time  
225  
75  
VCC = -3.0V, IC = -10mA,  
IB1 = IB2 = -1.0mA  
Fall Time  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
MMDT3946-7  
SOT-363  
3000/Tape & Reel  
Notes:  
3. Short duration test pulse used to minimize self-heating effect.  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K46 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
K46  
M = Month ex: 9 = September  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30123 Rev. 4 - 2  
3 of 5  
MMDT3946  
www.diodes.com  
15  
10  
f = 1MHz  
350  
300  
250  
200  
150  
5
Cibo  
100  
50  
0
Cobo  
0
0.1  
200  
1
0
175  
10  
25  
50  
150  
100  
75 100 125  
TA, AMBIENT TEMPERATURE (°C)  
VCB, COLLECTOR-BASE VOLTAGE (V)  
Fig. 1, Max Power Dissipation vs  
Ambient Temperature (Total Device)  
Fig. 2, Input and Output Capacitance vs.  
Collector-Base Voltage (NPN-3904)  
1000  
1
IC  
= 10  
IB  
TA = 125°C  
100  
TA = +25°C  
TA = -25°C  
0.1  
10  
VCE = 1.0V  
0.01  
1
0.1  
1
10  
1000  
100  
1
1000  
10  
0.1  
100  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, Typical Collector-Emitter  
Saturation Voltage vs. Collector Current (NPN-3904)  
Fig. 3, Typical DC Current Gain vs  
Collector Current (NPN-3904)  
100  
10  
IC  
IB  
f = 1MHz  
= 10  
1
10  
Cibo  
Cobo  
0.1  
1
0.1  
0.1  
1
10  
1000  
100  
1
100  
10  
VCB, COLLECTOR-BASE VOLTAGE (V)  
IC, COLLECTOR CURRENT (mA)  
Fig. 5, Typical Base-Emitter  
Saturation Voltage vs. Collector Current (NPN-3904)  
Fig. 6, Input and Output Capacitance vs.  
Collector-Base Voltage (PNP-3906)  
DS30123 Rev. 4 - 2  
4 of 5  
www.diodes.com  
MMDT3946  
1000  
10  
IC  
IB  
= 10  
TA = 125°C  
1
100  
TA = +25°C  
TA = -25°C  
0.1  
10  
VCE = 1.0V  
0.01  
1
10  
IC, COLLECTOR CURRENT (mA)  
1
100  
1000  
1
1000  
10  
0.1  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 7, Typical DC Current Gain vs  
Collector Current (PNP-3906)  
Fig. 8, Typical Collector-Emitter Saturation Voltage  
vs. Collector Current (PNP-3906)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
IC  
IB  
= 10  
1
10  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 9, Typical Base-Emitter  
Saturation Voltage vs. Collector Current (PNP-3906)  
DS30123 Rev. 4 - 2  
5 of 5  
MMDT3946  
www.diodes.com  

MMDT3946-7R-F 相关器件

型号 制造商 描述 价格 文档
MMDT3946-C SECOS Configuration : Dual ; Type : NPN ; PD (mW) : 200 ; VCBO (V) : 60 ; VCEO (V) : 40 ; IC (mA) : 200 ; hFE : 100/300 ; VCE(sat) : 10/1.0 ; fT (MHz) : 0.3 ; Package : 50/5.0 ; 获取价格
MMDT3946-Q1 ANBON SOT-363 获取价格
MMDT3946-TP MCC Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6 获取价格
MMDT3946-TP-HF MCC Small Signal Bipolar Transistor, 0.2A I(C), NPN and PNP, 获取价格
MMDT3946-TPQ2 MCC Tape: 3K/Reel , 120K/Ctn; 获取价格
MMDT3946DV GWSEMI Package : SOT-563; Polarity : NPN+PNP; Ic (mA) : 200; VCEO (V) : 40; hFE = Min : 100; hFE = Max : 300; hFE = Ic (mA) : 10; hFE = VCE (V) : 1; VCE (sat) = Max Volts : 0.3; VCE (sat) = Ic (mA) : 50; VCE (sat) = IB (mA) : 5; fT TYP (MHz) : 300; 获取价格
MMDT3946DW GWSEMI Package : SOT-363; Polarity : NPN+PNP; Ic (mA) : -200; VCEO (V) : -40; hFE = Min : 100; hFE = Max : 300; hFE = Ic (mA) : -10; hFE = VCE (V) : -1; VCE (sat) = Max Volts : -0.4; VCE (sat) = Ic (mA) : -50; VCE (sat) = IB (mA) : -5; fT TYP (MHz) : 250; 获取价格
MMDT3946FL3 DIODES Complementary, 40V, 0.2A, DFN1310-6 获取价格
MMDT3946G-AL6-R UTC COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 获取价格
MMDT3946HE3 MCC Tape: 3K/Reel , 120K/Ctn; 获取价格

MMDT3946-7R-F 相关文章

  • 三星携纳米棱镜技术图像传感器入局，打破小米供应链索尼垄断局面
    2025-07-15
    17
  • 运算放大器输入保护：噪声隐患与 JFET 解决方案
    2025-07-15
    19
  • 技术革新助力，国产 Wi-Fi 芯片全面起飞在即
    2025-07-15
    18
  • 突破！世界首个集成电子 - 光子 - 量子芯片问世
    2025-07-15
    22

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286