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MMDT3946LP4-7

更新时间：2025-07-03 11:23:59
品牌：DIODES
描述：COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS

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MMDT3946LP4-7 概述

COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS 互补NPN / PNP表面贴装晶体管 小信号双极晶体管

MMDT3946LP4-7 规格参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DFN
包装说明：SMALL OUTLINE, R-PDSO-N6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：19 weeks风险等级：5.64
Is Samacsys：N最大集电极电流 (IC)：0.2 A
集电极-发射极最大电压：40 V配置：SINGLE
最小直流电流增益 (hFE)：30JESD-30 代码：R-PDSO-N6
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.2 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICON标称过渡频率 (fT)：300 MHz
最大关闭时间（toff）：70 ns最大开启时间（吨）：250 ns
Base Number Matches：1

MMDT3946LP4-7 数据手册

通过下载MMDT3946LP4-7数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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MMDT3946LP4  
COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS  
Features  
•
•
•
•
•
Complementary Pair: One 3904 (NPN) and One 3906 (PNP)  
Epitaxial Planar Die Construction  
Ideally Suited for Automated Assembly Processes  
Lead Free by Design/RoHS Compliant (Note 1)  
“Green” Device (Note 2)  
DFN1310H4-6  
Dim  
A
Min  
Max  
Typ  
1.25 1.38 1.30  
0.95 1.08 1.00  
0.20 0.30 0.25  
Top View  
B
Mechanical Data  
C
G
H
•
•
Case: DFN1310H4-6  
Case Material: Molded Plastic. “Green Molding”  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish – NiPdAu over Copper leadframe (Lead  
Free Plating) Solderable per MIL-STD-202, Method 208  
D*  
E**  
G
-
-
-
-
0.10  
0.20  
-
Side View  
K
L
•
•
Z
-
0.40  
H
0
0.05 0.02  
L
E
•
•
Marking & Type Code Information: See Page 4  
B
K*  
L*  
0.10 0.20 0.15  
0.30 0.50 0.40  
N
B1  
C2  
E1  
Ordering Information: See Page 4  
C
D
Z
M
D
N
M**  
N*  
Z**  
-
-
-
-
-
-
0.35  
0.25  
0.05  
A
E2  
B2 C1  
Bottom View  
Internal Schematic  
(TOP VIEW)  
All Dimensions in mm  
E , B , C = PNP3906 Section  
1
1
1
* Dimensions D, K, L, N Repeat 4X  
** Dimensions E, M, Z Repeat 2X  
E , B , C = NPN3904 Section  
2
2
2
Maximum Ratings, NPN 3904 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
6.0  
V
Collector Current – Continuous  
200  
200  
625  
mA  
mW  
°C/W  
Power Dissipation (Notes 3, 4)  
Pd  
Thermal Resistance, Junction to Ambient (Note 3)  
Rθ  
JA  
Maximum Ratings, PNP 3906 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
V
-5.0  
-200  
200  
625  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Notes 3, 4)  
mA  
mW  
°C/W  
Pd  
Thermal Resistance, Junction to Ambient (Note 3)  
Rθ  
JA  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB.  
4. Maximum combined dissipation.  
MMDT3946LP  
© Diodes Incorporated  
DS30822 Rev. 4 - 2  
1 of 5  
www.diodes.com  
Electrical Characteristics, NPN 3904 Section @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
60  
40  
6.0  
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
⎯
⎯
⎯
50  
50  
I
I
I
C = 10μA, IE = 0  
C = 1.0mA, IB = 0  
V
E = 10μA, IC = 0  
CE = 30V, VEB(OFF) = 3.0V  
CE = 30V, VEB(OFF) = 3.0V  
nA  
nA  
V
V
Base Cutoff Current  
IBL  
⎯
ON CHARACTERISTICS (Note 5)  
IC = 100µA, VCE = 1.0V  
C = 1.0mA, VCE = 1.0V  
IC = 10mA, VCE = 1.0V  
C = 50mA, VCE = 1.0V  
IC = 100mA, VCE = 1.0V  
IC = 10mA, IB = 1.0mA  
⎯
⎯
40  
70  
100  
60  
I
DC Current Gain  
300  
hFE  
⎯
⎯
⎯
I
30  
0.20  
0.30  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
I
C = 50mA, IB = 5.0mA  
0.65  
⎯
0.85  
0.95  
IC = 10mA, IB = 1.0mA  
IC = 50mA, IB = 5.0mA  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
4.0  
pF  
Cobo  
fT  
⎯
VCB = 5.0V, f = 1.0MHz, IE = 0  
VCE = 20V, IC = 20mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
300  
MHz  
⎯
SWITCHING CHARACTERISTICS  
Delay Time  
35  
35  
ns  
ns  
ns  
ns  
td  
tr  
⎯
⎯
⎯
⎯
VCC = 3.0V, IC = 10mA,  
V
BE(off) = -0.5V, IB1 = 1.0mA  
VCC = 3.0V, IC = 10mA,  
B1 = IB2 = 1.0mA  
Rise Time  
Storage Time  
200  
50  
ts  
tf  
I
Fall Time  
Electrical Characteristics, PNP 3906 Section @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
-40  
-40  
-5.0  
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
⎯
⎯
⎯
I
I
I
C = -10μA, IE = 0  
C = -1.0mA, IB = 0  
V
E = -10μA, IC = 0  
CE = -30V, VEB(OFF) = -3.0V  
CE = -30V, VEB(OFF) = -3.0V  
-50  
nA  
nA  
V
V
Base Cutoff Current  
-50  
IBL  
⎯
ON CHARACTERISTICS (Note 5)  
IC = -100µA, VCE = -1.0V  
IC = -1.0mA, VCE = -1.0V  
⎯
⎯
60  
80  
100  
60  
DC Current Gain  
300  
hFE  
I
C = -10mA, VCE = -1.0V  
IC = -50mA, VCE = -1.0V  
C = -100mA, VCE = -1.0V  
⎯
⎯
⎯
30  
I
-0.25  
-0.40  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
IC = -10mA, IB = -1.0mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
-0.65  
⎯
-0.85  
-0.95  
I
C = -50mA, IB = -5.0mA  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
4.5  
pF  
Cobo  
fT  
⎯
VCB = -5.0V, f = 1.0MHz, IE = 0  
VCE = -20V, IC = -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
250  
MHz  
⎯
SWITCHING CHARACTERISTICS  
Delay Time  
35  
35  
ns  
ns  
ns  
ns  
td  
tr  
⎯
⎯
⎯
⎯
VCC = -3.0V, IC = -10mA,  
VBE(off) = 0.5V, IB1 = -1.0mA  
Rise Time  
Storage Time  
225  
75  
ts  
tf  
VCC = -3.0V, IC = -10mA,  
I
B1 = IB2 = -1.0mA  
Fall Time  
Notes:  
5. Short duration test pulse used to minimize self-heating effect.  
MMDT3946LP  
© Diodes Incorporated  
DS30822 Rev. 4 - 2  
2 of 5  
www.diodes.com  
250  
200  
f = 1MHz  
150  
100  
50  
0
200  
1,000  
1,000  
0
175  
25  
50  
150  
75 100 125  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1, Max Power Dissipation vs  
Fig. 2, Typical Output Capacitance  
Characteristics (NPN-3904)  
Ambient Temperature (Total Device) (Note 3)  
1
1,000  
100  
IC  
IB  
= 10  
TA = 125°C  
TA = +25°C  
TA = -25°C  
0.1  
10  
VCE = 1.0V  
1
0.1  
0.01  
1
10  
100  
0.1  
1
10  
1,000  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 3, Typical DC Current Gain vs  
Collector Current (NPN-3904)  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, Typical Collector-Emitter  
Saturation Voltage vs. Collector Current (NPN-3904)  
10  
f = 1MHz  
IC  
IB  
= 10  
1
0.1  
0.1  
1
10  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 5, Typical Base-Emitter  
Fig. 6, Typical Output Capacitance  
Characteristics (PNP-3906)  
Saturation Voltage vs. Collector Current (NPN-3904)  
DS30822 Rev. 4 - 2  
MMDT3946LP  
3 of 5  
© Diodes Incorporated  
www.diodes.com  
1,000  
100  
10  
10  
1
IC  
IB  
TA = 125°C  
= 10  
TA = +25°C  
TA = -25°C  
0.1  
VCE = 1.0V  
1
0.1  
0.01  
1
1,000  
10  
10  
IC, COLLECTOR CURRENT (mA)  
100  
1
100  
1,000  
IC, COLLECTOR CURRENT (mA)  
Fig. 7, Typical DC Current Gain vs  
Collector Current (PNP-3906)  
Fig. 8, Typical Collector-Emitter Saturation Voltage  
vs. Collector Current (PNP-3906)  
IC  
IB  
= 10  
IC, COLLECTOR CURRENT (mA)  
Fig. 9, Typical Base-Emitter Saturation Voltage  
vs. Collector Current (PNP-3906)  
Ordering Information (Note 6)  
Packaging  
DFN1310H4-6  
Shipping  
Device  
MMDT3946LP4-7  
3000/Tape & Reel  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
46= Product Type Marking Code  
46  
MMDT3946LP  
© Diodes Incorporated  
DS30822 Rev. 4 - 2  
4 of 5  
www.diodes.com  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
MMDT3946LP  
© Diodes Incorporated  
DS30822 Rev. 4 - 2  
5 of 5  
www.diodes.com  

MMDT3946LP4-7 CAD模型

原理图符号

PCB 封装图

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