MMDT3946LP4 [DIODES]
COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS; 互补NPN / PNP表面贴装晶体管 相关元器件产品Datasheet PDF文档
MMDT4124-7
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
0
DIODES
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MMDT3946LP4
COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
Features
•
•
•
•
•
Complementary Pair: One 3904 (NPN) and One 3906 (PNP)
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free by Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
DFN1310H4-6
Dim
A
Min
1.25
0.95
0.20
-
-
-
0
0.10
0.30
-
-
-
Max
1.38
1.08
0.30
-
-
0.40
0.05
0.20
0.50
-
-
-
Typ
1.30
1.00
0.25
0.10
0.20
-
0.02
0.15
0.40
0.35
0.25
0.05
NEW PRODUCT
Top View
G
H
B
C
D*
Mechanical Data
•
•
•
•
•
Case: DFN1310H4-6
Case Material: Molded Plastic. “Green Molding”
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – NiPdAu over Copper leadframe (Lead
Free Plating) Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 4
C
2
B
1
Ordering Information: See Page 4
Side View
Z
R0 .1
50
E**
G
L
N
C
K
L
E
H
K*
L*
•
E
1
B
D
D
N
A
M
Z
M**
N*
Z**
E
2
B
2
C
1
Internal Schematic
(TOP VIEW)
Bottom View
All Dimensions in mm
E
1
, B
1
, C
1
= PNP3906 Section
E
2
, B
2
, C
2
= NPN3904 Section
* Dimensions D, K, L, N Repeat 4X
** Dimensions E, M, Z Repeat 2X
Maximum Ratings, NPN 3904 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
Value
-40
-40
-5.0
-200
200
625
Unit
V
V
V
mA
mW
°C/W
Value
60
40
6.0
200
200
625
Unit
V
V
V
mA
mW
°C/W
Maximum Ratings, PNP 3906 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Notes:
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB.
Maximum combined dissipation.
DS30822 Rev. 4 - 2
1 of 5
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MMDT3946LP
© Diodes Incorporated
Electrical Characteristics, NPN 3904 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
300
⎯
⎯
⎯
⎯
@T
A
= 25°C unless otherwise specified
Max
⎯
⎯
⎯
50
50
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0
⎯
35
35
200
50
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= -0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
NEW PRODUCT
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
C
obo
f
T
t
d
t
r
t
s
t
f
V
V
pF
MHz
ns
ns
ns
ns
Electrical Characteristics, PNP 3906 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
-40
-40
-5.0
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
250
⎯
⎯
⎯
⎯
@T
A
= 25°C unless otherwise specified
Max
⎯
⎯
⎯
-50
-50
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5
⎯
35
35
225
75
Unit
V
V
V
nA
nA
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CE
= -30V, V
EB(OFF)
= -3.0V
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
5.
V
CE(SAT)
V
BE(SAT)
C
obo
f
T
t
d
t
r
t
s
t
f
V
V
pF
MHz
ns
ns
ns
ns
Short duration test pulse used to minimize self-heating effect.
DS30822 Rev. 4 - 2
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MMDT3946LP
© Diodes Incorporated
250
P
D
, POWER DISSIPATION (mW)
200
f = 1MHz
150
NEW PRODUCT
100
50
0
0
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device) (Note 3)
25
1
V
CE(SAT)
, COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
I
C
I
B
= 10
Fig. 2, Typical Output Capacitance
Characteristics (NPN-3904)
1,000
T
A
= 125°C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= +25°C
0.1
10
V
CE
= 1.0V
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current (NPN-3904)
1,000
0.01
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
10
I
C
I
B
= 10
f = 1MHz
1
0.1
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
Fig. 6, Typical Output Capacitance
Characteristics (PNP-3906)
DS30822 Rev. 4 - 2
3 of 5
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© Diodes Incorporated
1,000
10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 10
T
A
= 125°C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= +25°C
1
NEW PRODUCT
10
0.1
V
CE
= 1.0V
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7, Typical DC Current Gain vs
Collector Current (PNP-3906)
1,000
0.01
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
I
C
I
B
= 10
I
C
, COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
Ordering Information
Device
(Note 6)
Packaging
DFN1310H4-6
Shipping
3000/Tape & Reel
MMDT3946LP4-7
Notes:
6.
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
46
46= Product Type Marking Code
DS30822 Rev. 4 - 2
4 of 5
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MMDT3946LP
© Diodes Incorporated
NEW PRODUCT
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30822 Rev. 4 - 2
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MMDT3946LP
© Diodes Incorporated
