MMDT4124 [DIODES]

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; 双NPN小信号表面贴装晶体管
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MMDT4124
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMDT4126)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 5 and 6)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
2
B
1
E
1
E
2
B
2
C
1
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
30
25
5.0
200
Unit
V
V
V
mA
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
(Note 1)
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
(Notes 1 & 2)
(Note 1)
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
fe
f
T
NF
Min
30
25
5.0
120
60
120
300
Max
50
50
360
0.30
0.95
4.0
8.0
480
5.0
Unit
V
V
V
nA
nA
V
V
pF
pF
MHz
dB
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 20V, I
E
= 0V
V
EB
= 3.0V, I
C
= 0V
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 50mA, I
B
= 5.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 1.0V, I
C
= 2.0mA, f = 1.0kHz
V
CE
= 20V, I
C
= 10mA, f = 100MHz
V
CE
= 5.0V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMDT4124
Document number: DS30164 Rev. 10 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4124
1,000
350
P
D
, POWER DISSIPATION (mW)
h
FE
, DC CURRENT GAIN
R
θJA
= 625
°
C/W
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 1)
200
100
10
1
0.1
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
1
I
C
I
B
= 10
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
1
0.01
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.1
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
15
f = 1MHz
CAPACITANCE (pF)
10
5
C
ibo
C
obo
0
0.1
1
10
100
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics
MMDT4124
Document number: DS30164 Rev. 10 - 2
2 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4124
Ordering Information
Part Number
MMDT4124-7-F
Notes:
(Note 5)
Case
SOT-363
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1B YM
K1B YM
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
2000
L
Feb
2
2001
M
Mar
3
2002
N
2003
P
Apr
4
2004
R
May
5
2005
S
K1B = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2006
T
Jun
6
2007 2008
U
V
Jul
7
2009
W
Aug
8
2010
X
Sep
9
2011
Y
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
Package Outline Dimensions
A
B C
H
K
M
J
D
F
L
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
α
All Dimensions in mm
Suggested Pad Layout
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMDT4124
Document number: DS30164 Rev. 10 - 2
3 of 3
www.diodes.com
January 2009
© Diodes Incorporated