MMST4126-13 [DIODES]
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | MMST4126-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SPICE MODEL: MMST4126
Features
A
•
•
•
•
•
Epitaxial Planar Die Construction
SOT-323
C
Complementary NPN Type Available (MMST4124)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
B
B
B
E
Available in Lead Free/RoHS Compliant Version (Note 2)
G
H
C
D
0.65 Nominal
E
K
J
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
Mechanical Data
M
G
H
•
•
Case: SOT-323
L
D
F
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
K
0.90
0.25
0.10
0°
•
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
C
L
Terminals: Solderable per MIL-STD-202, Method 208
M
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
α
E
B
All Dimensions in mm
•
•
•
Marking (See Page 2): K2B
Ordering & Date Code Information (See Page 2)
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMST4126
-25
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-4.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
-200
mA
mW
°C/W
°C
Pd
200
RθJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30161 Rev. 5 - 2
1 of 3
MMST4126
www.diodes.com
© Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = -10µA, IE = 0
-25
-25
-4.0
⎯
⎯
⎯
V
V
IC = -1.0mA, IB = 0
IE = -10µA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
⎯
V
-50
-50
nA
nA
IEBO
Emitter Cutoff Current
⎯
ON CHARACTERISTICS (Note 3)
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
120
60
360
⎯
hFE
DC Current Gain
⎯
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
⎯
⎯
-0.40
-0.95
V
V
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
Cobo
Cibo
⎯
⎯
4.5
10
pF
pF
Input Capacitance
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
hfe
fT
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
120
250
⎯
480
⎯
⎯
MHz
dB
VCE = -20V, IC = -10mA,
f = 100MHz
V
CE = -5.0V, IC = -100µA,
NF
4.0
RS = 1.0kΩ, f = 1.0kHz
(Note 4)
Ordering Information
Device
Packaging
Shipping
MMST4126-7
SOT-323
3000/Tape & Reel
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST4126-7-F.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K2B
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30161 Rev. 5 - 2
2 of 3
MMST4126
www.diodes.com
100
f = 1MHz
350
300
250
200
150
10
Cibo
100
50
0
Cobo
1
200
1
0
175
25
50
150
0.1
100
75 100 125
10
VCB, COLLECTOR-BASE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
10
IC
IB
= 10
TA = 125°C
1
100
TA = +25°C
TA = -25°C
0.1
10
VCE = 1.0V
0.01
1
10
IC, COLLECTOR CURRENT (mA)
1
100
1000
1
1000
10
0.1
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
IC
IB
= 10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30161 Rev. 5 - 2
3 of 3
MMST4126
www.diodes.com
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