MMST6427 [DIODES]
NPN SURFACE MOUNT DARLINGTON TRANSISTOR; NPN表面贴装达林顿晶体管
| 型号： | MMST6427 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Ultra-Small Surface Mount Package
SOT-323
A
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
·
·
B
C
B
C
B
E
D
0.65 Nominal
G
H
Mechanical Data
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
·
·
·
·
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K1D
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
K
J
M
J
L
D
F
K
0.90
0.25
0.10
0°
L
·
·
·
·
M
C
a
All Dimensions in mm
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMST6427
Unit
V
Collector-Base Voltage
40
40
Collector-Emitter Voltage
V
Emitter-Base Voltage
12
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
500
mA
mW
K/W
°C
Pd
200
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30166 Rev. 3 - 1
1 of 2
MMST6427
www.diodes.com
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = 100mA, IE = 0
C = 100mA, IB = 0
40
40
12
¾
¾
¾
¾
¾
V
V
I
IE = 10mA, IC = 0
VCB = 30V, IE = 0
VCE = 25V, IB = 0
VEB = 10V, IC = 0
¾
V
50
1.0
50
nA
mA
nA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
IC
= 10mA, VCE = 5.0V
10,000
20,000
14,000
100,000
200,000
140,000
I
C = 100mA, VCE = 5.0V
hFE
DC Current Gain
¾
IC = 500mA, VCE = 5.0V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
1.2
1.5
VCE(SAT)
Collector-Emitter Saturation Voltage
¾
V
IC = 500mA, IB = 0.5mA
IC = 50mA, VCE =5.0V
VBE(SAT)
VBE(ON)
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
¾
2.0
V
V
1.75
V
CB = 10V, f = 1.0MHz, IE = 0
Cobo
Cibo
8.0 Typical
15 Typical
pF
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Capacitance
(Note 3)
Ordering Information
Device
Packaging
SOT-323
Shipping
MMST6427-7
3000/Tape & Reel
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1D= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1D
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30166 Rev. 3 - 1
2 of 2
www.diodes.com
MMST6427
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