MMSTA42-7-F [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
| 型号： | MMSTA42-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: MMSTA42
MMSTA42
Lead-free Green
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
SOT-323
·
·
·
·
·
·
Epitaxial Planar Die Construction
A
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
Complementary PNP Type Available (MMSTA92)
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
C
B
C
B
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
C
B
E
D
0.65 Nominal
G
H
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
Mechanical Data
G
H
K
J
M
·
·
Case: SOT-323
J
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
L
D
E
K
0.90
0.25
0.10
0°
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
M
C
Terminals: Solderable per MIL-STD-202, Method 208
a
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
All Dimensions in mm
·
·
·
Marking (See Page 2): K3M
E
B
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
Collector-Base Voltage
300
300
Collector-Emitter Voltage
V
Emitter-Base Voltage
6.0
V
Collector Current (Note 1)
200
mA
mW
°C/W
°C
Pd
Power Dissipation (Note 1)
200
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_freeindex.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30175 Rev. 9 - 2
1 of 4
MMSTA42
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = 100mA, IE = 0
300
300
6.0
¾
¾
¾
V
V
IC = 1.0mA, IB = 0
IE = 100mA, IC = 0
VCB = 200V, IE = 0
VCE = 6.0V, IC = 0
¾
V
100
100
nA
nA
IEBO
Collector Cutoff Current
¾
ON CHARACTERISTICS (Note 5)
IC = 1.0mA, VCE = 10V
25
40
40
IC
IC
=
=
10mA, VCE = 10V
30mA, VCE = 10V
hFE
DC Current Gain
¾
¾
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
¾
0.5
0.9
V
V
VCB = 20V, f = 1.0MHz, IE = 0
Ccb
fT
¾
3.0
pF
VCE = 20V, IC = 10mA,
f = 100MHz
Current Gain-Bandwidth Product
50
¾
MHz
(Note 4 and 6)
Ordering Information
Device
Packaging
Shipping
MMSTA42-7-F
SOT-323
3000/Tape & Reel
Notes:
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
6. For Packaging Details go our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3M
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011 2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30175 Rev. 9 - 2
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MMSTA42
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200
150
2.0
1.8
1.6
1.4
Note 1
IC
IB
= 10
TA = 150°C
1.2
1.0
0.8
0.6
100
50
0
TA = 25°C
0.4
TA = -50°C
0.2
0
1000
10
IC, COLLECTOR CURRENT (mA)
1
100
200
0
175
25
50
150
75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
Fig. 1, Max Power Dissipation vs
Ambient Temperature
10,000
1.0
0.9
VCE = 5V
VCE = 5V
1,000
100
0.8
0.7
TA = -50°C
TA = 150°C
0.6
0.5
TA = 25°C
TA = -50°C
TA = 25°C
0.4
0.3
10
1
TA = 150°C
0.2
0.1
10
1000
1
100
IC, COLLECTOR CURRENT (mA)
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs Collector Current
100
0.1
Fig. 3, DC Current Gain vs
Collector Current
100
10
1
VCE = 5V
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs
Collector Current
DS30175 Rev. 9 - 2
3 of 4
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MMSTA42
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproducts arerepresentedonour website, harmless againstall damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
PresidentofDiodesIncorporated.
DS30175 Rev. 9 - 2
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MMSTA42
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