MMSTA56-13 [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | MMSTA56-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: MMSTA55 MMSTA56
MMSTA55/MMSTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
SOT-323
A
Complementary NPN Type Available (MMSTA05/MMSTA06)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
C
B
B
Available in Lead Free/RoHS Compliant Version (Note 2)
C
B
E
D
0.65 Nominal
G
H
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
Mechanical Data
G
H
K
J
M
·
·
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
L
D
E
K
0.90
0.25
0.10
0°
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
M
Terminals: Solderable per MIL-STD-202, Method 208
C
a
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
All Dimensions in mm
·
·
·
·
MMSTA55 Marking K2H, K2G (See Page 2)
MMSTA56 Marking K2G (See Page 2)
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMSTA55
-60
MMSTA56
Unit
V
Collector-Base Voltage
-80
-80
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-4.0
-500
200
625
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
mA
mW
K/W
°C
Pd
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30167 Rev. 6 - 2
1 of 3
MMSTA55/MMSTA56
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
MMSTA55
MMSTA56
-60
-80
V(BR)CBO
IC = -100mA, IE = 0
¾
V
Collector-Emitter Breakdown Voltage
MMSTA55
MMSTA56
-60
-80
IC = -1.0mA, IB = 0
V(BR)CEO
V(BR)EBO
ICBO
¾
¾
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -100mA, IC = 0
-4.0
MMSTA55
MMSTA56
VCB = -60V, IE = 0
VCB = -80V, IE = 0
¾
-100
nA
Collector Cutoff Current
MMSTA55
MMSTA56
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ICEX
¾
-100
nA
ON CHARACTERISTICS (Note 3)
I
C = -10mA, VCE = -1.0V
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain
100
¾
¾
IC = -100mA, VCE = -1.0V
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
¾
¾
-0.25
-1.2
V
V
SMALL SIGNAL CHARACTERISTICS
VCE = -1.0V, IC = -100mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
50
¾
MHz
(Note 4)
Ordering Information
Device
Packaging
SOT-323
Shipping
MMSTA55-7
MMSTA56-7
3000/Tape & Reel
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: MMSTA56-7-F.
Marking Information
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2x
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30167 Rev. 6 - 2
2 of 3
www.diodes.com
MMSTA55/MMSTA56
0.25
0.20
0.15
0.10
200
150
IC
IB
= 10
TA = 25°C
100
50
0
TA = 150°C
TA = -50°C
0.05
0
1000
100
IC, COLLECTOR CURRENT (mA)
1
10
200
0
175
25
50
150
75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1000
100
10
1.0
VCE = 5V
0.9
VCE = 5V
TA = 150°C
0.8
0.7
0.6
0.5
0.4
TA = -50°C
TA = 25°C
TA = 25°C
TA = 150°C
TA = -50°C
0.3
0.2
0.1
0.1
1
10
100
10
1000
1
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
Fig. 4 Base Emitter Voltage vs. Collector Current
100
VCE = 5V
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Gain Bandwidth Product vs. Collector Current
DS30167 Rev. 6 - 2
3 of 3
www.diodes.com
MMSTA55/MMSTA56
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