MUR120 [DIODES]
1.0A SUPER-FAST RECTIFIER; 1.0A超快速整流器
| 型号： | MUR120 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SUPER-FAST RECTIFIER |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR120
1.0A SUPER-FAST RECTIFIER
Features
·
·
·
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
A
B
A
·
·
·
Surge Overload Rating to 35A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
C
D
Mechanical Data
DO-41 Plastic
Min
·
Case: Molded Plastic
Dim
A
Max
¾
·
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
25.40
·
·
·
·
Marking: R120
B
4.06
5.21
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
C
0.71
2.00
0.864
2.72
D
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MUR120
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
200
V
VR(RMS)
IO
RMS Reverse Voltage
141
1.0
V
A
Average Rectified Output Current
@ TT = 130°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
35
A
Forward Voltage
@ IF = 1.0A, TJ = 25°C
@ IF = 1.0A, TJ = 150°C
0.875
0.710
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA
= 25°C
2.0
50
mA
@ TA = 150°C
trr
tfr
Reverse Recovery Time (Note 2)
Forward Recovery Time (Note 3)
Typical Junction Capacitance (Note 1)
25
ns
ns
25
45
Cj
pF
RqJA
Tj, TSTG
Typical Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
72
K/W
°C
-65 to +175
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 0V DC.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
3. Measured with IF = 1.0A, di/dt = 100A/ms, Duty Cycle £ 2.0%.
DS30178 Rev. A-0
1 of 2
MUR120
10.0
7.0
3
2
1
0
5.0
TJ = 1750C
1000C
250C
3.0
2.0
1.0
0.5
0.1
0.05
0.01
175
0
25
50
75
100
125
150
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10
60
TJ = 1750C
Single Half-Sine-Wave
(JEDEC Method)
50
40
30
20
1.0
TJ = 1000C
0.1
10
0
0.01
TJ = 250C
1
10
100
0.001
0
20 40 60
80
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
160 180 200
100 120 140
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS30178 Rev. A-0
2 of 2
MUR120
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