RS3M [DIODES]
3.0A SURFACE MOUNT SUPER-FAST RECOVERY RECTIFIER; 3.0A表面装载超快速恢复整流
| 型号： | RS3M |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 3.0A SURFACE MOUNT SUPER-FAST RECOVERY RECTIFIER |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS3A/B - RS3M/B
3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Features
ꢁ
ꢁ
ꢁ
Glass Passivated Die Construction
Fast Recovery Time for High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 100A Peak
Ideally Suited for Automatic Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
SMB
Min
SMC
Min
B
Dim
A
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
ꢁ
ꢁ
ꢁ
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
A
J
C
D
B
C
D
Mechanical Data
E
G
H
ꢁ
ꢁ
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
SMB Weight: 0.09 grams (approx.)
SMC Weight: 0.20 grams (approx.)
G
H
J
E
ꢁ
ꢁ
ꢁ
ꢁ
All Dimensions in mm
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
A, B, D, G, J, K, M Suffix Designates SMC Package
@ TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RS3
A/AB
RS3
B/BB
RS3
RS3
RS3
J/JB
RS3
RS3
Characteristic
Symbol
Unit
D/DB G/GB
K/KB M/MB
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
35
280
3.0
V
A
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ TT = 75ꢀC
IFSM
100
1.3
A
Forward Voltage
@ IF = 3.0A
VFM
IRM
V
5.0
250
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA 25ꢀC
=
ꢂA
@ TA = 125ꢀC
trr
Cj
Maximum Recovery Time (Note 3)
150
250
500
ns
pF
Typical Junction Capacitance (Note 2)
50
25
RꢃJT
Tj, TSTG
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
K/W
ꢀC
-65 to +150
Notes:
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
DS15005 Rev. E-2
1 of 2
RS3A/B - RS3M/B
3.0
2.5
10
1.0
2.0
1.5
1.0
0.5
0
0.1
Tj = 25°C
IF Pulse Width: 300 µs
0.01
25
50
75
100
125
150
175
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
Single Half-Sine-Wave
(JEDEC Method)
100
Tj = 125°C
100
10
80
60
40
Tj = 25°C
1.0
0.1
20
0
1
10
100
0
20
40
60
80 100
120 140
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS15005 Rev. E-2
2 of 2
RS3A/B - RS3M/B
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