S1AB [DIODES]
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER; 1.0A表面安装玻璃钝化整流
| 型号： | S1AB |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1A/B - S1M/B
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
·
·
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
SMA
Min
SMB
Min
B
·
·
Dim
A
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
B
A
J
C
D
Mechanical Data
C
·
·
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
D
E
G
H
·
·
J
G
H
·
·
·
·
·
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Marking: Type Number, See Page 2
Ordering Information: See Page 2
E
All Dimensions in mm
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S1
A/AB
S1
B/BB
S1
S1
S1
J/JB
S1
S1
Characteristic
Symbol
Unit
D/DB G/GB
K/KB M/MB
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
35
280
1.0
V
A
Average Rectified Output Current
@ TT = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
IRM
1.1
V
5.0
100
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
@ TA = 25°C
@ TA = 125°C
mA
CT
Typical Total Capacitance
(Note 1)
10
30
pF
°C/W
°C
RqJT
Typical Thermal Resistance, Junction to Terminal (Note 2)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
DS16003 Rev. 8 - 2
1 of 2
S1A/B - S1M/B
Ordering Information (Note 3)
Device*
Packaging
Shipping
S1x-7
S1xB-7
SMA
SMB
5000/Tape & Reel
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
* x = Device type, e.g. S1A-7 (SMA package); S1AB-7 (SMB package).
Marking Information
XXX = Product type marking code, ex: S1A (SMA package)
XXXX = Product type marking code, ex: S1AB (SMB package)
= Manufacturers’ code marking
YWW = Date code marking
YWW
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
XXX(X)
1.0
0.8
10
1.0
0.1
0.6
0.4
0.2
0
Tj = 25°C
Resistive or
inductive load
PULSE WIDTH = 300ms
2% DUTY CYCLE
0.01
40
60
80 100
120
140
160 180
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
30
1000
100
8.3ms Single half sine-wave
JEDEC Method
25
Tj = 125°C
20
15
10
1.0
Tj = 25°C
10
5
0.1
0.01
1
100
10
0
40
120
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
NUMBER OF CYCLES @ 60Hz
Fig. 3 Typical Forward Characteristics
DS16003 Rev. 8 - 2
2 of 2
S1A/B - S1M/B
相关型号：
S1AB-T3
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
SENSITRON
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