S1MB-7 [DIODES]

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, SMB, 2 PIN;
S1MB-7
型号: S1MB-7
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, SMB, 2 PIN

文件: 总2页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S1A/B - S1M/B  
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER  
SPICE MODELS: S1A S1B S1D S1G S1J S1K S1M  
Features  
·
·
Glass Passivated Die Construction  
Low Forward Voltage Drop and High Current  
Capability  
Surge Overload Rating to 30A Peak  
Ideally Suited for Automated Assembly  
SMA  
Min  
SMB  
Min  
B
·
·
Dim  
A
Max  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
Max  
3.94  
4.57  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
3.30  
4.06  
1.96  
0.15  
5.00  
0.10  
0.76  
2.00  
B
A
J
C
D
Mechanical Data  
C
·
·
Case: Molded Plastic  
Case Material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solder Plated Terminal -  
Solderable per MIL-STD-202, Method 208  
D
E
G
H
·
·
J
G
H
·
·
·
·
·
Polarity: Cathode Band or Cathode Notch  
SMA Weight: 0.064 grams (approx.)  
SMB Weight: 0.093 grams (approx.)  
Marking: Type Number, See Page 2  
Ordering Information: See Page 2  
E
All Dimensions in mm  
A, B, D, G, J, K, M Suffix Designates SMA Package  
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package  
TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
S1  
A/AB  
S1  
B/BB  
S1  
S1  
S1  
J/JB  
S1  
S1  
Characteristic  
Symbol  
Unit  
D/DB G/GB  
K/KB M/MB  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
1.0  
V
A
Average Rectified Output Current  
@ TT = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@ IF = 1.0A  
VFM  
IRM  
1.1  
V
5.0  
100  
Peak Reverse Leakage Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 125°C  
mA  
CT  
Typical Total Capacitance  
(Note 1)  
10  
30  
pF  
°C/W  
°C  
RqJT  
Typical Thermal Resistance, Junction to Terminal (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.  
DS16003 Rev. 8 - 2  
1 of 2  
S1A/B - S1M/B  
Ordering Information (Note 3)  
Device*  
Packaging  
Shipping  
S1x-7  
S1xB-7  
SMA  
SMB  
5000/Tape & Reel  
3000/Tape & Reel  
Notes:  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
* x = Device type, e.g. S1A-7 (SMA package); S1AB-7 (SMB package).  
Marking Information  
XXX = Product type marking code, ex: S1A (SMA package)  
XXXX = Product type marking code, ex: S1AB (SMB package)  
= Manufacturers’ code marking  
YWW = Date code marking  
YWW  
Y = Last digit of year ex: 2 for 2002  
WW = Week code 01 to 52  
XXX(X)  
1.0  
0.8  
10  
1.0  
0.1  
0.6  
0.4  
0.2  
0
Resistive or  
inductive load  
0.01  
40  
60  
80 100  
120  
140  
160 180  
0
0.4  
0.8  
1.2  
1.6  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
TT, TERMINAL TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
30  
1000  
100  
8.3ms Single half sine-wave  
JEDEC Method  
25  
Tj = 125°C  
20  
15  
10  
1.0  
Tj = 25°C  
10  
5
0.1  
0.01  
1
100  
10  
0
40  
120  
80  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 4 Typical Reverse Characteristics  
NUMBER OF CYCLES @ 60Hz  
Fig. 3 Typical Forward Characteristics  
DS16003 Rev. 8 - 2  
2 of 2  
S1A/B - S1M/B  

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