SB160 [DIODES]
1.0A SCHOTTKY BARRIER RECTIFIER; 1.0A肖特基整流器
| 型号： | SB160 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB120 - SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
A
B
A
·
·
Surge Overload Rating to 40A Peak
C
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
D
·
Plastic Material - UL Flammability
Classification 94V-0
DO-41 Plastic
Min
Dim
A
Max
¾
Mechanical Data
25.40
4.06
B
5.21
0.864
2.72
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
C
0.71
D
2.00
·
·
·
·
Polarity: Cathode Band
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB120
20
SB130
30
SB140
SB150
50
SB160
60
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
VR(RMS)
IO
RMS Reverse Voltage
14
21
28
35
42
V
A
Average Rectified Output Current
(Note 1)
1.0
(See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
VFM
IRM
40
A
Forward Voltage (Note 2)
@ IF = 1.0A
0.50
10
0.70
5.0
V
0.5
Peak Reverse Current
at Rated DC Blocking Voltage (Note 2)
@ TA = 25°C
@ TA = 100°C
mA
RqJL
RqJA
Tj
Typical Thermal Resistance Junction to Lead (Note 1)
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
15
50
°C/W
°C/W
-65 to +125
-65 to +150
°C
TSTG
Storage Temperature Range
-65 to +150
Notes:
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
DS23022 Rev. 4 - 2
1 of 3
SB120-SB160
www.diodes.com
10
Tj = +125°C
1.0
Tj = +75°C
Tj = +25°C
Tj = -25°C
1.0
0.5
Resistive or Inductive Load
0.375” (9.5mm) lead length
SB120 - SB140
1% Duty Cycle
SB150 & SB160
0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - SB120 thru SB140
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
40
10
8.3ms Single Half Sine-Wave
(JEDEC Method)
Tj = Tj(max)
30
1.0
Tj = +125ºC
20
Tj = +25ºC
0.1
10
0
1% Duty Cycle
0.01
0.8
1.0
0
0.2
0.4
0.6
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 3 Typ. Forward Characteristics - SB150 thru SB160
10,000
1000
Tj = 25°C
f = 1.0MHz
Vsig = 50m Vp-p
1000
100
10
Tj = +125°C
Tj = +75°C
SB120 - SB140
SB150 - SB160
100
1
Tj = +25°C
0.1
Tj = -25°C
10
0.01
0.1
1
10
100
25
PERCENTAGE OF PEAK REVERSE VOLTAGE (%)
75
0
50
100
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Total Capacitance
Fig. 6 Typical Reverse Characteristics, SB120 thru SB140
DS23022 Rev. 4 - 2
2 of 3
www.diodes.com
SB120-SB160
10,000
1000
Tj = +125°C
100
Tj = +70°C
10
1
Tj = +25°C
0.1
0
50
100
PERCENTAGE OF PEAK REVERSE VOLTAGE (%)
Fig. 7 Typical Reverse Characteristics, SB150 thru SB160
DS23022 Rev. 4 - 2
3 of 3
www.diodes.com
SB120-SB160
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