SB180-T [DIODES]
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER; 1.0A高压肖特基整流器
| 型号： | SB180-T |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: SB170 SB180 SB190 SB1100
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
A
B
A
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
·
·
High Temperature Soldering: 260°C/10 Second at Terminal
Lead Free Finish, RoHS Compliant (Note 3)
C
D
Mechanical Data
·
·
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
DO-41
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Dim
A
Min
25.4
4.1
Max
¾
Terminals: Finish ¾ Bright Tin. Plated Leads - Solderable per
MIL-STD-202, Method 208
B
5.2
·
·
·
·
·
Polarity: Cathode Band
C
0.71
2.0
0.86
2.7
Mounting Position: Any
D
Ordering Information: See Last Page
Marking: Type Number
All Dimensions in mm
Weight: 0.3 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB170
70
SB180
80
SB190
90
SB1100
100
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
VR(RMS)
IO
RMS Reverse Voltage
49
56
63
70
V
A
Average Rectified Output Current
@ TT = 85°C
1.0
25
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
A
VFM
IRM
Forward Voltage @ IF = 1.0A
@ TA
=
25°C
25°C
0.80
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA
@ TA = 100°C
=
0.5
10
mA
Cj
Typical Junction Capacitance (Note 2)
80
15
50
pF
K/W
K/W
°C
RqJL
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
RqJA
Tj, TSTG
-65 to +125
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30116 Rev. 3 - 1
1 of 2
SB170 - SB1100
www.diodes.com
ã Diodes Incorporated
20
10
1.0
1.0
0.5
Tj = 25°C
0
0.1
25
50
75
100
125
150
0.1
0.5
0.9
1.3
1.7
2.1
TL, LEAD TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
40
30
Tj = 25°C
Single Half Sine-Wave
(JEDEC Method)
f = 1.0MHz
Tj = 150°C
100
20
10
0
10
0.1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance
(Note 4)
Ordering Information
Device
SB170-A
SB170-B
SB170-T
SB180-A
SB180-B
SB180-T
SB190-A
SB190-B
SB190-T
SB1100-A
SB1100-B
SB1100-T
Packaging
Shipping
5K/Ammo Pack
1K/Bulk
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf
DS30116 Rev. 3 - 1
2 of 2
SB170 - SB1100
www.diodes.com
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