SB190 [DIODES]
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER; 1.0A高压肖特基整流器
| 型号： | SB190 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
·
·
·
·
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
A
B
A
C
·
·
High Temperature Soldering:
D
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
DO-41
Dim
A
Min
25.4
4.1
Max
¾
·
·
Case: Molded Plastic
Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
B
5.2
·
·
·
·
Polarity: Cathode Band
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
C
0.71
2.0
0.86
2.7
D
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB170
70
SB180
80
SB190
90
SB1100
100
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
VR(RMS)
IO
RMS Reverse Voltage
49
56
63
70
V
A
Average Rectified Output Current
@ TT = 85°C
1.0
25
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
A
VFM
IRM
Forward Voltage @ IF = 1.0A
@ TA
=
25°C
25°C
0.80
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA
@ TA = 100°C
=
0.5
10
mA
Cj
Typical Junction Capacitance (Note 2)
80
15
50
pF
K/W
K/W
°C
RqJL
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
RqJA
Tj, TSTG
-65 to +125
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30116 Rev. B-1
1 of 2
SB170 - SB1100
20
10
1.0
1.0
0.5
Tj = 25°C
IF Pulse Width = 300µs
0
0.1
25
50
75
100
125
150
0.1
0.5
0.9
1.3
1.7
2.1
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
40
30
1000
Single Half Sine-Wave
(JEDEC Method)
Tj = 25°C
f = 1.0MHz
Tj = 150°C
100
20
10
0
10
0.1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance
DS30116 Rev. B-1
2 of 2
SB170 - SB1100
相关型号：
SB190S
1.0 Amp Schottky Barrier Rectifiers Voltage Range 70 to 100 volts Forward Current 1.0 Ampere
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