SBG1640CT-13 [DIODES]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 40V V(RRM), Silicon, PLASTIC, D2PAK-3;
| 型号： | SBG1640CT-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 40V V(RRM), Silicon, PLASTIC, D2PAK-3 功效 瞄准线 二极管 |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBG1630CT - SBG1645CT
16A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
E
D2PAK
Min
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
Dim
A
G
H
A
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
4
·
·
Surge Overload Rating to 175A Peak
B
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
C
J
B
D
1
2
3
·
E
G
H
M
Mechanical Data
D
K
J
C
L
Case: D2PAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
K
·
·
L
PIN 1
PIN 3
PIN 2 & 4
M
·
·
·
·
Polarity: See Diagram
Marking: Type Number
Weight: 1.7 grams (approx.)
Mounting Position: Any
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBG
1630CT
SBG
1640CT
SBG
1645CT
SBG
1635CT
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
25
40
28
45
32
V
VR(RMS)
IO
RMS Reverse Voltage
V
A
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
@ TC = 95°C
16
IFSM
175
0.55
A
Forward Voltage, per Element
@ IF = 8.0A
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ Tj = 25°C
@ Tj = 125°C
1.0
50
mA
Cj
Typical Junction Capacitance (Note 2)
275
3.0
pF
K/W
°C
RqJC
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +125
Notes:
1. Thermal resistance: junction to case mounted on heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30090 Rev. B-2
1 of 2
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SBG1630CT - SBG1645CT
ã Diodes Incorporated
100
20
16
12
Tj = 125°C
10
Tj = 25°C
8
1.0
0.1
4
0
0
50
100
150
0
0.4
0.8
1.2
TC, CASE TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
300
250
200
150
1000
500
Tj = 25°C
f = 1.0MHz
100
200
100
50
0
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
DS30090 Rev. B-2
2 of 2
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SBG1630CT - SBG1645CT
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