SBL1630(TUBE) [DIODES]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 30V V(RRM), Silicon;
| 型号： | SBL1630(TUBE) |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 30V V(RRM), Silicon 整流二极管 瞄准线 功效 局域网 |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: SBL1630 SBL1635 SBL1640 SBL1645 SBL1650 SBL1660
SBL1630 - SBL1660
16A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
·
Low Power Loss, High Efficiency
Dim
A
B
C
D
E
Min
14.48
10.00
2.54
5.90
2.80
12.70
0.69
3.54
4.07
1.15
0.30
2.04
4.83
Max
15.75
10.40
3.43
6.40
3.93
14.27
0.93
3.78
4.82
1.39
0.50
2.79
5.33
L
High Surge Capability
B
M
High Current Capability and Low Forward Voltage Drop
C
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
D
E
K
·
Lead Free Finish, RoHS Compliant (Note 3)
A
G
J
Pin 1
Pin 2
Mechanical Data
·
·
Case: TO-220AC
K
L
G
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
N
M
N
P
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: See Diagram
R
P
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
+
Pin 1 +
Pin 2 -
R
Case
·
·
·
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
Weight: 2.24 grams (approx.)
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
1630
SBL
1635
SBL
1640
SBL
1645
SBL
1650
SBL
1660
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
16
@ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
275
A
VFM
IRM
Forward Voltage Drop
@ IF =16A, TC = 25°C
0.57
0.75
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC 25°C
=
1.0
50
mA
@ TC = 100°C
Cj
Typical Junction Capacitance (Note 2)
700
3.5
pF
°C/W
°C
RqJC
Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23045 Rev. 4 - 2
1 of 3
SBL1630-SBL1660
www.diodes.com
ã Diodes Incorporated
100
10
20
16
12
SBL1630 - SBL1645
SBL1650 - SBL1660
8
1.0
0.1
4
0
0.3
0.5
0.9
0.1
0.7
0
50
100
150
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
300
250
200
150
4000
8.3 ms single half-sine-wave
JEDEC method
Tj = 25°C
1000
100
50
0
100
1
0.1
1.0
10
100
100
10
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
100
10
Tj = 100°C
Tj = 75°C
1.0
Tj = 25°C
0.1
0.01
0
40
80
120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23045 Rev. 4 - 2
2 of 3
SBL1630-SBL1660
www.diodes.com
(Note 4)
Ordering Information
Device
Packaging
Shipping
SBL16xx*
TO-220AC
50/Tube
* xx = Device type, e.g. SBL1645
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
Notes:
DS23045 Rev. 4 - 2
3 of 3
SBL1630-SBL1660
www.diodes.com
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