SBM340-13-F [DIODES]
3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 3A表面贴装肖特基整流器
| 型号： | SBM340-13-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: SBM340
SBM340
3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
·
Guard Ring Die Construction for
Transient Protection
·
·
·
Low Power Loss, High Efficiency
Low Forward Voltage Drop
POWERMITEâ3
E
A
Min
4.03
6.40
Max
4.09
6.61
Dim
A
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
G
P
·
Lead Free Finish/RoHS Compliant (Note 2)
3
B
C
.889 NOM
1.83 NOM
1.10 1.14
.178 NOM
H
J
D
Mechanical Data
B
E
·
·
Case: POWERMITEâ3
G
H
1
2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
5.01
5.17
4.43
M
J
4.37
·
·
·
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C
D
K
K
.178 NOM
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead Free Plating (Matte Tin Finish).
C
C
L
L
.71
.36
.77
.46
M
P
Polarity: See Diagram
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
Marking: Type Number
1.73
1.83
Weight: 0.072 grams (approximate)
All Dimensions in mm
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Value
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
VR(RMS)
IO
RMS Reverse Voltage
28
3
V
A
Average Rectified Output Current
(See also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
@ TC = 100°C
IFSM
50
A
R
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
3.4
°C/W
°C
qJS
Tj
-55 to +125
-55 to +150
TSTG
Storage Temperature Range
°C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Min
Typ
Max
Unit
Characteristic
Symbol
Test Condition
V(BR)R
IR = 0.5mA
Reverse Breakdown Voltage (Note 1)
40
¾
¾
V
IF = 3A, Tj = 25°C
IF = 3A, Tj = 125°C
IF = 6A, Tj = 25°C
IF = 6A, Tj = 125°C
0.46
0.40
0.57
0.54
0.50
0.44
0.61
0.58
VFM
Forward Voltage
¾
V
mA Tj = 25°C, VR = 40V
mA Tj = 100°C, VR = 40V
15
¾
500
20
IRM
CT
Reverse Current (Note 1)
Total Capacitance
¾
¾
f = 1.0MHz, VR = 4.0V DC
pF
180
¾
Notes:
1. Short duration test pulse used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7.
DS30362 Rev. 5- 2
1 of 3
SBM340
www.diodes.com
ã Diodes Incorporated
10,000
10
T
J
= +125°C
T
J
= +125°C
1000
T
J
= +75°C
100
TJ = +75°C
T
J
= +25°C
1.0
10
T
J
= -25°C
TJ = +25°C
1
0.1
TJ = -25°C
0.1
0.01
0.1
0.2
0.4
0.3
0.5
0.6
0.7
0.8
10
20
30
0
40
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 1 Typical Forward Characteristics
Fig. 2 Typical Reverse Characteristics
50
1000
f = 1 MHz
Single Half-Sine-Wave
T
J
= 25°C
40
T
C
= 100°C
30
100
20
10
10
0
0.1
1
10
100
10
1
100
V , DC REVERSE VOLTAGE (V)
R
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
Fig. 4 Typical Capacitance vs. Reverse Voltage
DS30362 Rev. 5 - 2
2 of 3
www.diodes.com
SBM340
4
4
3.5
Note 4
Note 3
3
2.5
2
3
Note 4
2
1
0
1.5
Note 5
1
Note 5
0.5
0
4
1
3
0
2
5
6
7
25
125
50
75
100
150
I
, AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
T , AMBIENT TEMPERATURE (°C)
A
F(AV)
Fig. 5 DC Forward Current Derating
(Note 6)
Ordering Information
Device
Packaging
Shipping
SBM340-13-F
POWERMITEâ3
5000/Tape & Reel
Notes:
3. T = T
, R
= 3.4°C/W, R
= 0°C/W.
A
SOLDERING POINT qJS
qSA
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R in range of 20-40°C/W.
qJA
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
95-115°C/W.
in range of
qJA
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM340 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
SBM340
YYWW(K)
(K) = Factory Designator
POWERMITE is a registered trademark of Microsemi Corporation.
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodes Incorporatedandall thecompanies whoseproducts arerepresentedon our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
PresidentofDiodes Incorporated.
DS30362 Rev. 5- 2
3 of 3
SBM340
www.diodes.com
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