SD930 [DIODES]
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER; 大电流肖特基整流器型号: | SD930 |
厂家: | DIODES INCORPORATED |
描述: | HIGH CURRENT SCHOTTKY BARRIER RECTIFIER |
文件: | 总3页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD930 / SD940 / SD945
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
High Current Capability and Low Forward Drop
High Surge Capacity
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
Plastic Package - UL Flammability
Classification 94V-0
A
B
A
C
D
DO-201AD
Min
Mechanical Data
Dim
A
Max
—
·
·
Case: DO-201AD, Molded Plastic
Leads: Solderable per MIL-STD-202,
Method 208
25.40
7.20
B
9.50
1.30
5.30
C
1.20
·
·
·
Polarity: Cathode band
Approx. Weight: 1.1 grams
Mounting Position: Any
D
4.80
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SD930
SD940
SD945
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
40
45
V
Maximum Average Forward Current
(Note 2)
@ TC = 120°C
IO
9.0
A
A
Maximum Peak One-Cycle
Surge Current
@ 5µs Sine Wave
@ 10ms Sine Wave
2150
340
IFSM
Forward Voltage (Note 1)
@ IF = 9.0A, TJ = 25°C
@ IF = 9.0A, TJ = 125°C
@ IF = 18A, TJ = 25°C
@ IF = 18A, TJ = 125°C
0.48
0.42
0.57
0.52
VFM
V
Voltage Rate of Change
Peak Reverse Current
at Rated DC Blocking Voltage (Note 1)
dv/dt
IRM
10,000
V/µs
mA
@TJ = 25°C
@ TJ = 125°C
0.8
70
Cj
Maximum Junction Capacitance (Note 2)
900
8.0
pF
K/W
°C
RqJL
Typical Thermal Resistance Junction to Case (Note 4)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Pulse width £ µs - Duty Cycle £ 2%.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V.
3. Device mounted to heat sink with 1/8" lead length.
4. Thermal Resistance from Junction to Lead Vertical PC Board Mounting, 9.5mm Lead Length.
DS23026 Rev. C-2
1 of 3
SD930/SD940/SD945
10
8
50
10
TJ = 125°C
6
TJ = 25°C
4
2
1.0
0.1
Pulse width = 300µs
2% duty cycle
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
4000
1000
T
= 25°C
J
f = 1MHz
10000
1000
1
10000
10
100
1000
100
10
1.0
100
0.1
tp, PULSE DURATION (ms)
VR, REVERSE VOLTAGE (V)
Fig. 4, Maximum Non-repetitive Surge Current
Fig. 3 Maximum Junction Capacitance
DS23026 Rev. C-2
2 of 3
SD930/SD940/SD945
10
D = 0.50
0.33
0.25
0.17
1.0
0.08
P(DM)
0.1
t1
t2
Duty Cycle, D = t1 / t2
Single Pulse
Peak TJ = PDM X RQJL + TC
0.01
0.0001
0.001
0.01
0.1
1.0
10
100
t1, RECTANGULAR PULSE DURATION (seconds)
Fig. 5, Typical Thermal Resistance RQJL
100
10
Tj = 125ºC
Tj = 85ºC
1.0
0.1
Tj = 25ºC
0.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 6, Typical IR vs. % of VR
DS23026 Rev. C-2
3 of 3
SD930/SD940/SD945
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