SF14-13 [DIODES]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2;型号: | SF14-13 |
厂家: | DIODES INCORPORATED |
描述: | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 |
文件: | 总3页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCONTINUED
SF11 - SF14
1.0A SUPER-FAST RECOVERY RECTIFIER
Features
•
•
•
•
•
Low Leakage
Low Forward Voltage Drop
High Current Capability
Super-fast Switching Speed < 35ns
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
DO-41
•
•
Case: Molded Plastic
Terminals: Plated Axial Leads, Solderable per MIL-STD-202
Method 208
Dim
A
B
Min
25.4
4.1
Max
—
5.2
•
•
•
Polarity: Color Band Denotes Cathode
Mounting Position: Any
Weight: 0.3 grams (approximate)
C
D
0.71
2.0
0.86
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Symbol
VRRM
VRMS
VDC
SF11
50
35
SF12
100
70
SF13
150
105
SF14
200
140
Unit
V
V
Maximum DC Blocking Voltage
50
100
150
200
V
Maximum Average Forward Rectified Current .375"
9.5mm Lead Length
Peak Forward Surge Current 8.3 ms Single Half Sine-Wave
1.0
30
A
A
I(AV)
IFM
@ TA=55°C
Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage
Maximum DC Reverse Current at Rated
0.975
5.0
V
Vf
IR
μA
50
IR
μA
DC Blocking Voltage
@ TA = 150°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
35
63
ns
pF
°C
Trr
CJ
-65 to + 175
T , TSTG
j
Notes:
1. Reverse Recovery Test Conditions: IF =0.5 A, IR =1.0 A, Irr=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0V.
DS24001 Rev. 6 - 4
1 of 3
SF11 - SF14
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2.0
100
10
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
TJ = 150ºC
TJ = 100ºC
1.0
0.1
1.0
TJ = 25ºC
0
0.01
40
0
25
50
75
100
125 150 175
0
20
40
60
80
100 120 140
PERCENT OF PEAK REVERSE VOLTAGE
Fig. 2 Typical Reverse Characteristics
AMBIENT TEMPERATURE (ºC)
Fig. 1 Typical Forward Current Derating Curve
10
1.0
0.1
30
20
0.01
0.001
Pulse Width
= 300 ms
1% Duty Cycle
10
TJ = 25ºC
8.3ms Single Half Sine-Wave
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Typ. Instantaneous Fwd Characteristics
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current (A)
70
60
50
40
TJ = 25ºC
30
20
10
0
0.1
1.0
10
100
1000
REVERSE VOLTAGE (VOLTS)
Fig. 5 Typical Junction Capacitance
DS24001 Rev. 6 - 4
2 of 3
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SF11 - SF14
© Diodes Incorporated
DISCONTINUED
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS24001 Rev. 6 - 4
3 of 3
SF11 - SF14
© Diodes Incorporated
www.diodes.com
相关型号:
SF14-AP
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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