TB0900L-13 [DIODES]
30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE; 30A双向表面贴装晶闸管浪涌保护器件
| 型号： | TB0900L-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 文件： | 总4页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TB0640L - TB3500L
30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
T
EN
PM
LO
VE
Features
DE
R
DE
UN
·
·
·
·
·
·
30A Peak Pulse Current @ 10/1000ms
150A Peak Pulse Current @ 8/20ms
58 - 320V Stand-Off Voltages
Oxide-Glass Passivated Junction
Bi-Directional Protection In a Single Device
A
SMB
Min
High Off-State impedance and Low On-State
Voltage
Dim
A
Max
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
B
C
B
Mechanical Data
C
·
Case: SMB, Molded Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
D
·
E
D
F
·
·
G
G
H
F
E
H
·
Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
All Dimensions in mm
·
·
·
Weight: 0.093 grams (approx.)
Marking: Date Code and Marking Code (See Page 4)
Ordering Information: See Page 4
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
Non-Repetitive Peak On-State Current
Junction Temperature Range
Symbol
Ipp
Value
30
Unit
A
@10/1000us
ITSM
Tj
@8.3ms (one-half cycle)
15
A
-40 to +150
-55 to +150
30
°C
TSTG
Storage Temperature Range
°C
R
qJL
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
°C/W
°C/W
%/°C
R
qJA
120
DVBR/DTj
Typical Positive Temperature Coefficient for Breakdown Voltage
0.1
Maximum Rated Surge Waveform
Peak Value (Ipp
)
100
50
0
Waveform
2/10 us
Standard
Ipp (A)
200
150
100
60
tr = rise time to peak value
tp = decay time to half value
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
8/20 us
Half Value
10/160 us
10/700 us
10/560 us
10/1000 us
ITU-T, K20/K21
FCC Part 68
50
GR-1089-CORE
30
tp
tr
0
TIME
DS30359 Rev. 2 - 1
1 of 4
TB0640L - TB3500L
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Off-State
Leakage
Current @
VDRM
Rated
Repetitive
Off-State
Voltage
On-State
Voltage
@ IT = 1A
Breakover
Current
IBO
Holding Current
IH
Breakover
Voltage
Off-State
Capacitance
Marking
Code
Part Number
Min
Min
VDRM (V)
IDRM (uA)
VBO (V)
VT (V)
CO (pF)
Max (mA)
Max (mA)
(mA)
(mA)
50
50
50
50
50
50
50
50
50
50
50
TB0640L
TB0720L
TB0900L
TB1100L
TB1300L
TB1500L
TB1800L
TB2300L
TB2600L
TB3100L
TB3500L
58
65
5
5
5
5
5
5
5
5
5
5
5
77
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
800
800
800
800
800
800
800
800
800
800
800
100
100
100
60
T064L
T072L
T090L
T110L
T130L
T150L
T180L
T230L
T260L
T310L
T350L
88
75
98
90
130
160
180
220
265
300
350
400
120
140
160
190
220
275
320
60
60
60
40
40
40
40
Symbol
Parameter
VDRM
IDRM
VBR
IBR
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
VBO
IBO
Breakover voltage
Breakover current
IH
Holding current
NOTE: 1
VT
On state voltage
Peak pulse current
Off-state capacitance
IPP
CO
NOTE: 2
Notes:
1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
I
PP
I
BO
I
H
I
BR
I
DRM
V
V
BR
V
T
V
V
DRM
BO
T
EN
PM
LO
VE
DE
R
DE
UN
DS30359 Rev. 2 - 1
2 of 4
TB0640L - TB3500L
1.2
100
1.15
V
BR
= (T )
J
10
V
BR
= (T = 25°C)
J
1.1
1.05
1
1
0.1
V
DRM
= 50V
0.95
0.01
0.9
-50
50
125
75 100 150 175
-25
0
25
0.001
0
-25
25
50
75
100 125
150
T , JUNCTION
J
TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
Fig. 1 Off-State Current vs. Junction Temperature
100
1.1
V = (T )
BO J
V
BO
= (T = 25°C)
J
1.05
10
1
T = 25°C
j
0.95
1
-25
25
175
150
-50
0
50 75 100 125
1
2
3
4
5
6
7
8
9
T , JUNCTION TEMPERATURE (ºC)
J
V , ON-STATE VOLTAGE (V)
T
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
Fig. 4 On-State Current vs. On-State Voltage
2
1
1.5
1
T = 25°C
j
C = (V )
O R
f = 1 Mhz
V
RMS
= 1V
C
= (V = 1V)
R
O
0.5
IH = (TJ)
IH = (TJ = 25°C)
0.1
0
-50
-25
25
50
75
100 125
1
10
V , REVERSE VOLTAGE (V)
R
100
0
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Voltage Bias
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
T
EN
PM
LO
VE
DE
R
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UN
DS30359 Rev. 2 - 1
3 of 4
TB0640L - TB3500L
(Note 3)
Ordering Information
Device
Packaging
Shipping
TB0640L-13
TB0720L-13
TB0900L-13
TB1100L-13
TB1300L-13
TB1500L-13
TB1800L-13
TB2300L-13
TB2600L-13
TB3100L-13
TB3500L-13
SMB
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXXXX = Product Type Marking Code
YWW = Date Code Marking
Y = Year ex: 2 = 2002
WW = Week
YWW
XXXXX
Date Code Key
Year
2002
2003
2004
Code
2
3
4
T
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PM
LO
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DS30359 Rev. 2 - 1
4 of 4
TB0640L - TB3500L
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