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TB1100M-7 [DIODES]

Silicon Surge Protector, 30A, PLASTIC, SMB, 2 PIN;
TB1100M-7
型号： TB1100M-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Silicon Surge Protector, 30A, PLASTIC, SMB, 2 PIN

光电二极管
文件： 总4页 (文件大小：83K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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TB0640M - TB3500M  
50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE  
PROTECTIVE DEVICE  
Features  
DEVELOPMENT  
UNDER  
·
·
·
·
·
·
50A Peak Pulse Current @ 10/1000ms  
250A Peak Pulse Current @ 8/20ms  
58 - 320V Stand-Off Voltages  
Oxide-Glass Passivated Junction  
Bi-Directional Protection In a Single Device  
High Off-State impedance and Low On-State  
Voltage  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
A
SMB  
Min  
Dim  
A
Max  
4.57  
3.94  
2.21  
0.31  
5.59  
0.20  
2.62  
1.52  
4.06  
3.30  
1.96  
0.15  
5.21  
0.05  
2.01  
0.76  
B
C
·
B
C
D
E
D
Mechanical Data  
F
G
G
H
·
·
Case: SMB, Molded Plastic  
Terminals: Solder Plated Terminal -  
Solderable per MIL-STD-202, Method 208  
F
H
All Dimensions in mm  
E
·
Polarity: None; Bi-Directional Devices Have No  
Polarity Indicator  
·
·
Weight: 0.093 grams (approx.)  
Marking: Date Code and Marking Code  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Non-Repetitive Peak Impulse Current  
Non-Repetitive Peak On-State Current  
Junction Temperature Range  
Symbol  
Ipp  
Value  
50  
Unit  
A
@10/1000us  
@8.3ms (one-half cycle)  
ITSM  
30  
A
Tj  
-40 to +150  
-55 to +150  
20  
°C  
TSTG  
RqJL  
Storage Temperature Range  
°C  
Thermal Resistance, Junction to Lead  
Thermal Resistance, Junction to Ambient  
°C/W  
°C/W  
%/°C  
RqJA  
100  
DVBR/DTj  
Typical Positive Temperature Coefficient for Breakdown Voltage  
0.1  
Maximum Rated Surge Waveform  
Peak Value (Ipp  
)
100  
50  
0
Waveform  
2/10 us  
Standard  
Ipp (A)  
300  
250  
150  
100  
75  
tr = rise time to peak value  
tp = decay time to half value  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
8/20 us  
Half Value  
10/160 us  
10/700 us  
10/560 us  
10/1000 us  
ITU-T, K20/K21  
FCC Part 68  
GR-1089-CORE  
50  
tp  
tr  
0
TIME  
DS30361 Rev. 1 - 1  
1 of 4  
TB0640M - TB3500M  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Off-State  
Leakage  
Current @  
VDRM  
Rated  
Repetitive  
Off-State  
Voltage  
On-State  
Voltage  
@ IT = 1A  
Breakover  
Current  
IBO  
Holding Current  
IH  
Breakover  
Voltage  
Off-State  
Capacitance  
Part Number  
Marking Code  
Min  
Max  
Min  
VDRM (V)  
IDRM (uA)  
VBO (V)  
VT (V)  
C
O (pF)  
Max (mA)  
(mA)  
(mA)  
(mA)  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
TB0640M  
TB0720M  
TB0900M  
TB1100M  
TB1300M  
TB1500M  
TB1800M  
TB2300M  
TB2600M  
TB3100M  
TB3500M  
58  
65  
5
5
5
5
5
5
5
5
5
5
5
77  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
140  
140  
140  
90  
T064M  
T072M  
T090M  
T110M  
T130M  
T150M  
T180M  
T230M  
T260M  
T310M  
T350M  
88  
75  
98  
90  
130  
160  
180  
220  
265  
300  
350  
400  
120  
140  
160  
190  
220  
275  
320  
90  
90  
90  
60  
60  
60  
60  
Symbol  
VDRM  
IDRM  
VBR  
IBR  
Parameter  
Stand-off Voltage  
Leakage current at stand-off voltage  
Breakdown voltage  
Breakdown current  
VBO  
IBO  
Breakover voltage  
Breakover current  
IH  
Holding current  
NOTE: 1  
VT  
On state voltage  
Peak pulse current  
Off-state capacitance  
IPP  
CO  
NOTE: 2  
Notes:  
1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge  
recovery time does not exceed 30ms.  
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.  
I
IPP  
IBO  
IH  
IBR  
IDRM  
V
VBR  
VT  
VDRM  
VBO  
DEVELOPMENT  
UNDER  
DS30361 Rev. 1 - 1  
2 of 4  
TB0640M - TB3500M  
1.2  
100  
10  
1.15  
VBR= (TJ)  
VBR = (TJ = 25°C)  
1.1  
1.05  
1
1
0.1  
0.01  
VDRM = 50V  
0.95  
0.9  
-50  
50  
125  
75 100 150 175  
-25  
0
25  
0.001  
0
-25  
25  
50  
75  
100 125  
150  
TJ, JUNCTION  
TEMPERATURE (°C)  
Fig. 2 Relative Variation of Breakdown Voltage  
vs. Junction Temperature  
TJ, JUNCTION TEMPERATURE (°C)  
Fig. 1 Off-State Current vs. Junction Temperature  
1.1  
100  
VBO= (TJ)  
VBO = (TJ = 25°C)  
1.05  
10  
1
Tj = 25°C  
0.95  
-25  
25  
175  
150  
-50  
0
50 75 100 125  
1
1
5
1.5  
2
2.5  
VT, ON-STATE VOLTAGE (V)  
3
3.5  
4
4.5  
T , JUNCTION TEMPERATURE (ºC)  
Fig. 3JRelative Variation of Breakover Voltage  
vs. Junction Temperature  
Fig. 4 On-State Current vs. On-State Voltage  
1.4  
1.3  
1.2  
1.1  
1
1
0.9  
0.8  
0.7  
Tj = 25°C  
CO= (VR  
)
f = 1 Mhz  
VRMS = 1V  
0.6  
0.5  
0.4  
0.3  
CO = (VR = 1V)  
IH = (TJ)  
IH = (TJ = 25°C)  
0.1  
-50  
-25  
25  
50  
75  
100 125  
0
1
10  
VR, REVERSE VOLTAGE (V)  
100  
TJ, JUNCTION TEMPERATURE (°C)  
Fig. 5 Relative Variation of Holding Current vs.  
Junction Temperature  
Fig. 6 Relative Variation of Junction Capacitance  
vs. Reverse Voltage Bias  
DEVELOPMENT  
UNDER  
DS30361 Rev. 1 - 1  
3 of 4  
TB0640M - TB3500M  
(Note 3)  
Ordering Information  
Device  
Packaging  
Shipping  
TB0640M-TB3500M  
SMA  
5000/Tape & Reel  
Notes:  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
XXX = Product Type Marking Code  
YWW = Date Code Marking  
Y = Year ex: N = 2002  
WW = Week  
YWW  
XXXXX  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
Code  
8
9
0
1
2
3
4
DEVELOPMENT  
UNDER  
DS30361 Rev. 1 - 1  
4 of 4  
TB0640M - TB3500M  

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