U2N7002 [DIODES]
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN;
| 型号： | U2N7002 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
2N7002
ISSUE 4 – APRIL 2006
FEATURES
*
60 Volt VCEO
S
D
PARTMARKING DETAIL – 702
G
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
60
UNIT
V
Dra in -S o u rce Vo lta g e
Co n tin u o u s Drain Cu rren t at Ta m b=25°C
Pu ls ed Dra in Cu rre n t
ID
115
m A
m A
V
IDM
800
Ga te-S o u rce Vo lta g e
VGS
± 40
Po w er Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
330
m W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre a kd o w n
Vo lta g e
BVDS S
60
V
ID=10µA, VGS=0V
ID=250mA, VDS= VGS
VGS=± 20V, VDS=0V
Ga te-S o u rce Th re s h o ld
Vo lta g e
VGS (th )
1
2.5
10
V
Ga te-Bo d y Lea ka g e
IGS S
IDS S
n A
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
1
500
VDS=48V, VGS=0V
DS=48V, VGS=0V, T=125°C(2)
µA
µA
V
On -S ta te Dra in Cu rre n t(1)
ID(o n )
500
m A
VDS=25V, VGS=10V
VGS=10V, ID=500m A
S tatic Drain -S o u rce On -S ta te
Vo lta g e (1)
VDS (o n )
3.75
375
V
m V
VGS=5V, ID=50m A
S tatic Drain -S o u rce On -S ta te
Res ista n ce (1)
RDS (o n )
g fs
7.5
7.5
VGS=10V, ID=500m A
Ω
Ω
VGS=5V, ID=50m A
Fo rw a rd Tra n s co n d u ctan ce
(1)(2)
80
m S
VDS=25V, ID=500m A
In p u t Ca p a cita n ce (2)
Cis s
50
25
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
Co s s
VDS=25V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r Cap acita n ce Crs s
(2)
5
p F
Tu rn -On Tim e (2)(3)
Tu rn -Off Tim e (2)(3)
t(o n )
t(o ff)
20
20
n s
n s
V
DD ≈30V, ID=200m A
Rg=25Ω, RL=150Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
3 - 2
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