UFMMT549 [DIODES]
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN;
| 型号： | UFMMT549 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
FMMT549
FMMT549A
MEDIUM POWER TRANSISTORS
✪
FEATURES
ISSUE 3 - OCTOBER 1995
*
*
Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
1 Amp continuous current
E
C
COMPLEMENTARY TYPES FMMT549 - FMMT449
FMMT549A - N/A
B
PARTMARKING DETAIL
FMMT549 - 549
FMMT549A - 59A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-35
Collector-Emitter Voltage
-30
V
Emitter-Base Voltage
-5
-2
V
Peak Pulse Current
A
Continuous Collector Current
Base Current
IC
-1
A
IB
-200
mA
mW
°C
Power Dissipation: at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
500
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-35
-30
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Cut-Off Currents
-0.1
-10
VCB=-30V
µA
µA
VCB=-30V, Tamb=100°C
IEBO
-0.1
VEB=-4V
µA
Saturation Voltages
VCE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-100mA, IB=-1mA*
FMMT549A
-0.30
-1.25
-1
V
V
V
VBE(sat)
-0.9
IC=-1A, IB=-100mA*
IC=-1A, VCE=-2V*
Base Emitter Turn-on Voltage VBE(on)
Static Forward Current hFE
Transfer Ratio
-0.85
70
80
40
200
130
80
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
FMMT549
FMMT549A
100
150
100
160
200
300
500
IC=-500mA, VCE=-2V*
IC=-500mA, VCE=-2V*
Transition Frequency
fT
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
25
pF
ns
ns
VCB=-10V, f=1MHz
50
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 127
FMMT549
FMMT549A
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
1
0.1
0.01
µ
0.1
1
10
100
I
- Collector Current (Amps)
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 128
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