UFZTA64 [DIODES]

Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4;
UFZTA64
型号: UFZTA64
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4

开关 光电二极管 晶体管
文件: 总2页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SOT223 PNP SILICON PLANAR  
DARLINGTON TRANSISTORS  
FZTA64  
ISSUE 5– MARCH 2001  
4
PARTMARKING DETAILS:  
COMPLIMENTARY TYPE:  
FZTA64  
FZTA14  
3
2
1
SOT223  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-30  
-30  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-10  
V
Peak Pulse Current  
-800  
mA  
mA  
mA  
W
Continuous Collector Current  
Peak Base Current  
IC  
-500  
IBM  
-200  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
2
Tj:Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-30  
V
IC=-10µA, IE=0  
Collector-Emitter  
Breakdown Voltage  
-30  
-10  
V
IC=-10mA, IB=0*  
IE=-10µA, IC=0  
VCB=-30V, IE=0  
VEB=-10V, IC=0  
Emitter-Base Breakdown  
Voltage  
V
Collector Cut-Off  
Current  
-100  
nA  
Emitter Cut-Off Current  
IEBO  
-100  
-1.5  
nA  
V
Collector-Emitter Saturation VCE(sat)  
Voltage  
IC=-100mA, IB=-0.1mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-2.0  
V
IC=-100mA, IB=-0.1mA*  
Static Forward Current  
Transfer Ratio  
hFE  
10K  
20K  
IC=-10mA, VCE=-5V  
IC=-100mA, VCE=-5V*  
Transition  
Frequency  
fT  
125  
MHz  
IC=-50mA, VCE=-5V  
f=20MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
TBA  
FZTA64  
TYPICAL CHARACTERISTICS  
1.5  
1.5  
+25° C  
IC/IB=1000  
1.0  
0.5  
0
1.0  
-55 °C  
+25 °C  
+100 °C  
0.5  
IC/IB=1000  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
60k  
45k  
30k  
15k  
0
2.1  
1.4  
0.7  
0
VCE=5V  
IC/IB=1000  
+100 °C  
+25 °C  
-55 °C  
-55 °C  
+25 °C  
+100 °C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
VCE=5V  
2.0  
1.5  
1.0  
0.5  
0
-55 °C  
+25 °C  
+100 °C  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VBE(on) v IC  
TBA  

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