UFZTA64 [DIODES]
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4;
| 型号： | UFZTA64 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
FZTA64
ISSUE 5– MARCH 2001
✪
4
PARTMARKING DETAILS:
COMPLIMENTARY TYPE:
FZTA64
FZTA14
3
2
1
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-30
-30
Collector-Emitter Voltage
Emitter-Base Voltage
V
-10
V
Peak Pulse Current
-800
mA
mA
mA
W
Continuous Collector Current
Peak Base Current
IC
-500
IBM
-200
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
2
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-30
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
-30
-10
V
IC=-10mA, IB=0*
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-10V, IC=0
Emitter-Base Breakdown
Voltage
V
Collector Cut-Off
Current
-100
nA
Emitter Cut-Off Current
IEBO
-100
-1.5
nA
V
Collector-Emitter Saturation VCE(sat)
Voltage
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-2.0
V
IC=-100mA, IB=-0.1mA*
Static Forward Current
Transfer Ratio
hFE
10K
20K
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V*
Transition
Frequency
fT
125
MHz
IC=-50mA, VCE=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
TBA
FZTA64
TYPICAL CHARACTERISTICS
1.5
1.5
+25° C
IC/IB=1000
1.0
0.5
0
1.0
-55 °C
+25 °C
+100 °C
0.5
IC/IB=1000
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
60k
45k
30k
15k
0
2.1
1.4
0.7
0
VCE=5V
IC/IB=1000
+100 °C
+25 °C
-55 °C
-55 °C
+25 °C
+100 °C
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
VCE=5V
2.0
1.5
1.0
0.5
0
-55 °C
+25 °C
+100 °C
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
TBA
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