US1A-7 [DIODES]
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, PLASTIC, SMA, 2 PIN;
| 型号： | US1A-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, PLASTIC, SMA, 2 PIN 瞄准线 光电二极管 |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1A - US1M
1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M
Features
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Recovery Time for High Efficiency
Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
B
SMA
·
·
·
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
Dim
A
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
J
C
D
B
C
D
Mechanical Data
·
E
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Mounting Position: Any
G
H
·
G
H
J
·
·
·
·
E
All Dimensions in mm
TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol US1A US1B US1D US1G US1J US1K US1M Unit
VRRM
VRWM
VR
VR(RMS)
IO
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
280
1.0
V
A
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ TT = 75°C
IFSM
30
A
Forward Voltage Drop
@ IF = 1.0A
VFM
IRM
1.0
1.3
1.7
V
5.0
100
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA 25°C
=
mA
@ TA = 100°C
trr
Cj
Reverse Recovery Time (Note 2)
50
20
75
10
ns
pF
Typical Junction Capacitance (Note 1)
RqJT
Tj, TSTG
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
30
°C/W
°C
-65 to +150
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.
DS16008 Rev. B1-2
1 of 2
US1A - US1M
www.diodes.com
ã Diodes Incorporated
10
1.0
1.0
US1A - US1D
US1G
US1J - US1M
0.5
0.1
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
40
30
1000
Single Half Sine-Wave
(JEDEC Method)
100
Tj = 100°C
10
20
10
0
1.0
Tj = 25°C
0.1
Tj = 150°C
0.01
0
20
40
60
80
100 120 140
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(+)
Oscilloscope
(Note 1)
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS16008 Rev. B1-2
2 of 2
US1A - US1M
www.diodes.com
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