UZTX655 [DIODES]
Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | UZTX655 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX654
ZTX655
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
*
*
*
150 Volt VCEO
1 Amp continuous current
Low saturation voltage
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX654
125
ZTX655
150
UNIT
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
125
150
5
2
1
1
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
A
Ptot
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
ZTX654
= 25°C unless otherwise stated).
ZTX655
PARAMETER
SYMBOL
V(BR)CBO
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
125
125
5
150
150
5
V
V
V
IC=100µA, IE=0
IC=10mA, IB=0*
IE=100µA, IC=0
VCB=100V, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
100
nA
nA
100
100
VCB=125V, IE=0
Emitter Cut-Off
Current
IEBO
nA
VEB=3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
hFE
0.5
0.5
0.5
0.5
V
V
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
Base-Emitter
Saturation Voltage
1.1
1.1
V
IC=500mA, IB=50mA*
Base-Emitter
Turn-On Voltage
1.0
1.0
V
IC=500mA, VCE=5V*
Static Forward
Current Transfer
Ratio
50
50
20
50
50
20
IC=10mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
Transition
Frequency
fT
30
30
MHz IC=10mA, VCE=20V
f=20MHz
Output Capacitance Cobo
20
20
pF
VCB=20V, f=1MHz
3-225
ZTX654
ZTX655
TYPICAL CHARACTERISTICS
0.18
0.10
100
80
VCE=5V
IC/IB=10
60
40
20
0
0
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
CE(sat)
IC - Collector Current (Amps)
FE
C
v I
h
C
v I
V
1.2
1.2
IC/IB=10
VCE=5V
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0.4
0.01
0.01
0.1
1
10
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
BE(on)
V
C
v I
Single Pulse Test at Tamb=25°C
10
td
tr
tf
µs
ts
µs
IB1=IB2=IC/10
VCE=10V
ts
3.0
2.0
1.0
0.7
0.6
1.0
td
0.5
D.C.
1s
0.4
0.3
0.2
100ms
10ms
1.0ms
300µs
0.1
tf
0.1
0
tr
ZTX655
0.01
0.1
1
0.01
1
10
100
1000
VCE - Collector Voltage (Volts)
IC - Collector Current (Amps)
Safe Operating Area
Switching Speeds
3-226
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