UZTX696B [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | UZTX696B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
ZTX696B
FEATURES
*
*
*
180 Volt VCEO
Gain of 500 at IC=100mA
Very low saturation voltage
APPLICATIONS
*
*
*
*
Darlington replacement
Battery powered circuits
Motor drivers
C
B
E
E-Line
Relay / solenoid drivers
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
180
180
5
V
V
1
A
Continuous Collector Current
Practical Power Dissipation *
IC
0.5
1.5
A
Ptotp
Ptot
W
Power Dissipation at Tamb=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
180
180
5
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
0.1
0.1
VCB=145V
µA
µA
IEBO
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
0.9
V
IC=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
V
IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
500
150
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
3-247
ZTX696B
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
70
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
200
6
pF
pF
VEB=0.5V, f=1MHz
VCE=10V, f=1MHz
Cobo
ton
toff
80
4400
ns
ns
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
3-248
ZTX696B
TYPICAL CHARACTERISTICS
IC/IB=100
IC/IB=50
IC/IB=10
Tamb=25°C
-55°C
+25°C
+100°C
+175°C
IC/IB=50
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE=5V
-55°C
+25°C
+100°C
+175°C
1.6
IC/IB=50
1.6
1.4
1.2
1.5K
1K
1.4
1.2
1.0
0.8
1.0
0.8
0.6
0.4
0.2
0.6
0.4
0.2
500
0
0
0.01
0.1
10
1
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
BE(sat)
FE
h
C
v I
C
v I
V
Single Pulse Test at Tamb=25°C
1
-55°C
+25°C
+100°C
+175°C
VCE=5V
1.6
1.4
1.2
1.0
0.8
0.6
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.4
0.2
0
0
0.001
0.01
0.1
1
10
1
10
100
1000
IC - Collector Current (Amps)
BE(on)
VCE - Collector Voltage (Volts)
C
V
v I
Safe Operating Area
3-249
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