UZXTCM322TA [DIODES]
Small Signal Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 2 X 2 MM, MLP322, 5 PIN;型号: | UZXTCM322TA |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 2 X 2 MM, MLP322, 5 PIN 开关 晶体管 |
文件: | 总6页 (文件大小:179K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXTCM322
MPPS™ Miniature Package Power Solutions
50V NPN LOW SATURATION TRANSISTOR
SUMMARY
CEO
V
= 50V; R
= 68m ; I = 4A
SAT C
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
2mm x 2mm MLP
(single die)
PCB area and device placement savings
Reduced component count
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage (100mV max @1A)
•
•
•
h
specified up to 6A
FE
I = 4A Continuous Collector Current
C
2mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters
Charging Circuits
Power switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTCM322TA
ZXTCM322TC
7
8mm
8mm
3000
13
10000
DEVICE MARKING
SC
2mm x 2mm Single MLP
underside view
ISSUE 2 - JUNE 2002
1
ZXTCM322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
100
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current (c)
Continuous Collector Current (a)
Base Current
V
V
V
CBO
CEO
EBO
V
7.5
6
V
I
I
I
A
CM
4
A
C
B
1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
P
P
P
1.5
12
W
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
3
24
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Ambient (d)
Junction to Ambient (e)
NOTES
R
R
R
R
θJA
θJA
θJA
θJA
51
125
42
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at tр5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions requires for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide wide tracks is Rth=300ЊC giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXTCM322
TYPICAL CHARACTERISTICS
3.5
3.0
V
CE(SAT)
10
1
T
amb=25°C
Limited
2.5
2oz Cu
Note: e
DC
2.0
1s
100ms
1.5
10ms
0.1
1oz Cu
1.0
1ms
Note: a
100us
0.5
Single Pulse, Tamb=25°C
1
0.01
0.0
0.1
10
100
0
25
50
75
100 125 150
V Collector-Emitter Voltage (V)
Temperature (°C)
CE
Derating Curve
Safe Operating Area
225
80
60
40
20
0
200
175
150
125
100
75
D=0.5
1oz copper
Single Pulse
D=0.05
D=0.1
D=0.2
50
25
2oz copper
10
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
100
Pulse Width (s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
T
amb=25°C
jmax=150°C
Continuous
2oz copper
1oz copper
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXTCM322
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
I =100A
Collector-Base Breakdown
Voltage
V
V
V
100
190
V
(BR)CBO
(BR)CEO
C
Collector-Emitter Breakdown
Voltage
50
65
V
V
I =10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
7.5
8.2
I =100A
E
(BR)EBO
CBO
I
I
I
25
25
25
nA
nA
nA
V
V
V
=80V
CB
Emitter Cut-Off Current
=6V
EBO
EB
Collector Emitter Cut-Off Current
=40V
CES
CES
Collector-Emitter Saturation
Voltage
V
10
20
mV
mV
mV
mV
mV
mV
I =0.1A, I =10mA*
C B
CE(sat)
70
100
200
220
300
320
I =1A, I =50mA*
C B
145
115
225
270
I =1A, I =10mA*
C B
I =2A, I =50mA*
C
C
B
B
B
I =3A, I =100mA*
I =4A, I =200mA*
C
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
1.00
0.94
1.05
1.00
V
V
I =4A, I =200mA*
C B
BE(sat)
BE(on)
FE
I =4A, V =2V*
CE
C
Static Forward Current Transfer
Ratio
200
300
200
100
400
450
400
225
40
I =10mA, V =2V*
CE
C
I =0.2A, V =2V*
C
C
CE
CE
CE
I =1A, V =2V*
I =2A, V =2V*
C
I =6A, V =2V*
CE
C
Transition Frequency
f
100
165
MHz
I =50mA, V =10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
12
20
pF
ns
ns
V
=10V, f=1MHz
obo
(on)
(off)
CB
t
t
170
750
V
=10V, I =1A
CC
C
I
=I =10mA
B1 B2
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
4
ZXTCM322
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
0.20
Tamb=25°C
IC/IB=100
100m
10m
1m
100°C
25°C
0.15
0.10
0.05
0.00
IC/IB=50
-55°C
IC/IB=10
100m
1m
10
1m
100m
10
IC10mCollector Current 1(A)
IC10mCollector Current 1(A)
VCE(SAT) vIC
VCE(SAT) vIC
630
540
450
360
270
180
90
1.0
V =2V
IC/IB=50
CE
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
0.8
0.6
0.4
-55°C
25°C
25°C
-55°C
100°C
100m
0
1m
10m
100m
1
10
1m
10
IC10mCollector Current 1(A)
IC Collector Current (A)
h vIC
VBE(SAT) vIC
FE
1.0
0.8
0.6
0.4
V =2V
CE
-55°C
25°C
100°C
1m
100m
10
IC10mCollector Current 1(A)
VBE(ON) vIC
ISSUE 2 - JUNE 2002
5
ZXTCM322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.18
0.17
MAX.
1.00
0.05
0.75
0.25
0.28
0.30
MIN.
MAX.
0.0393
0.002
A
0.0315
0.00
e
E
0.0255 REF
0.0787 BSC
A1
A2
A3
b
0.0255
0.0059
0.0070
0.0066
0.0295
0.0098
0.0110
0.0118
E2
E4
L
0.79
0.99
0.68
0.45
0.031
0.039
0.0267
0.0177
0.48
0.20
0.0188
0.0078
b1
D
L2
r
0.125 MAX.
0.075 BSC
0Њ 12Њ
0.005 REF
0.0029 BSC
0Њ 12Њ
2.00 BSC
0.0787 BSC
D2
D4
1.22
0.56
1.42
0.76
0.0480
0.0220
0.0559
0.0299
⍜
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ISSUE 2 - JUNE 2002
6
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