ZC823A [DIODES]
Variable Capacitance Diode, 33pF C(T), 25V, Silicon, Hyperabrupt, TO-92 COMPATIBLE, E-LINE PACKAGE-2;
| 型号： | ZC823A |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Variable Capacitance Diode, 33pF C(T), 25V, Silicon, Hyperabrupt, TO-92 COMPATIBLE, E-LINE PACKAGE-2 二极管 变容二极管 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON ION-IMPLANTED
ZC820
SERIES
HYPERABRUPT TUNER DIODES
ISSUE 2 MARCH 94
DIODE PIN CONNECTION
1
2
1
2
CATHODE
ANODE
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
MAX
25
UNIT
Reverse Voltage
VR
IF
V
mA
mW
°C
Forward Current
200
Power Dissipation at Tamb=25°C
Junction Temperature
Storage Temperature Range
Ptot
Tj
300
125
Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
=25°C)
amb
PARAMETER
SYMBOL MIN
TYP
MAX
0.02
0.04
UNIT CONDITIONS
µA
Reverse Voltage Leakage
IR
Temperature Coefficient
of Capacitance
0.03
%/°C VR=3V
η
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART
NO
Nominal Capacitance
in pF
@ VR=2V, f=1MHz
Minimum
Q
@ VR=3V
f=50MHz
Capacitance Ratio
C2 /C20,
at f=1MHz
MIN
8
NOM
10
MAX
12
MIN
5
MAX
6.5
6.5
6.5
6.5
6.5
6.5
6.5
ZC820
300
300
200
200
200
100
100
ZC821
ZC822
ZC823
ZC824
ZC825
ZC826
12
15
18
5
17.6
26.4
37.6
54.4
80
22
26.4
39.6
56.4
81.6
120
5
33
5
47
5
68
5
100
5
*Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B
3-107
ZC820
SERIES
200
100
826
825
824
823
822
10
821
820
1
1
10
100
Reverse Voltage (Volts)
Diode Capacitance
3-108
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