ZC831ATC [DIODES]
Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3;
| 型号： | ZC831ATC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 |
| 文件： | 总8页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
830 series
Silicon 25V hyperabrupt varactor diodes
ZC829, ZDC833, ZMV829, ZMDC830 and ZV831
Description
A range of silicon varactor diodes for use in
frequency control and filtering. Featuring
closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase
noise performance. Available in single or dual
common cathode format in a wide rage of
miniature surface mount packages.
SOT23
SOT323
SOD323
Features
•
•
•
•
•
•
Close tolerance CV characteristics
High tuning ratio
Low I (typically 200pA)
R
SOD523
Excellent phase noise performance
High Q
Range of miniature surface mount packages
Applications
•
•
•
•
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
Where steeper CV slopes are required there is the 12V hyperabrupt range:
ZC930, ZMV930, ZV930 and ZV931
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
830 series
Order codes and device marking
SOT23
SOD323
SOD523
SOT23
SOT323
Order code
Mark Order code
Mark Order code
Mark Order code
Mark Order code
Mark
ZC829ATA
ZC829BTA
ZC830ATA
ZC830BTA
ZC831ATA
ZC831BTA
ZC832ATA
ZC832BTA
ZC833ATA
ZC833BTA
ZC834ATA
ZC834BTA
ZC835ATA
ZC835BTA
ZC836ATA
ZC836BTA
J9A ZMV829ATA
J9B ZMV829BTA
J1A ZMV830ATA
J1B ZMV830BTA
J3A ZMV831ATA
J3B ZMV831BTA
J4A ZMV832ATA
J4B ZMV832BTA
J2A ZMV833ATA
J2B ZMV833BTA
J5A ZMV834ATA
J5B ZMV834BTA
J6A ZMV835ATA
J6B ZMV835BTA
J7A
AA
CA
AB
CB
AC
CC
AD
CD
AE
CE
AF
CF
ZV831BV2TA
ZV832BV2TA
81
82
ZMDC831BTA
ZMDC832BTA
CC
CD
ZDC833ATA
ZDC834ATA
C2A
C5A
AG
CG
J7B
Note:
The order codes are shown as TA which is for 7 inch reels. For 13 inch reels substitute TC in place of TA in the order code.
Tape and reel information
Reel code
Reel size
(inches)
Tape width
(millimeters)
Quantity per reel
TA
TC
7
8
8
3,000
13
10,000
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
830 series
Tuning characteristics at T
= 25°C
amb
Part
Capacitance (pF)
Min Q
Capacitance ratio
C / C
V =2V, f=1MHz
V = 3V
R
R
2
20
f = 50MHz
@ f = 1MHz
Min.
Min.
7.38
7.79
9.0
Nom.
8.2
8.2
Max.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
Max.
5.8
5.8
6.0
6.0
6.0
6.0
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
4.3
4.3
4.5
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
Absolute maximum ratings
Parameter
Symbol
Max.
Unit
Forward current
I
200
mA
F
Power dissipation at T
Power dissipation at T
Power dissipation at T
= 25°C SOT23
= 25°C SOD323
= 25°C SOD523
P
P
P
330
330
mW
mW
mW
°C
amb
amb
amb
tot
tot
tot
250
Operating and storage temperature range
-55 to +150
Electrical characteristics at T
= 25°C
amb
Conditions
Reverse breakdown voltage I = 10A
Paramater
Min.
Typ.
Max.
Unit
25
V
R
Reverse voltage leakage
V = 20V
0.2
20
nA
R
Temperature coefficient of
capacitance
V = 3V, f = 1MHz
300
400
ppCm/°C
R
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
830 series
Typical characteristics
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
830 series
Package outline - SOT23
E
e
e1
b
3 leads
D
L1
E1
A
L
c
A1
Dim.
Millimeters
Min. Max.
Inches
Max.
Dim.
Millimeters
Inches
Min.
Min.
Max.
0.51
0.10
2.50
0.64
Max.
0.013
0.0004
0.083
0.018
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
2.67
1.20
-
0.37
0.085
3.05
1.40
1.10
0.53
0.15
0.105
0.047
-
0.015
0.0034
0.120
0.055
0.043
0.021
0.0059
H
K
L
M
N
-
0.33
0.01
2.10
0.45
0.95 NOM
-
0.0375 NOM
G
1.90 NOM
0.075 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Package outline - SOT323
b
e
e
L
Q1
E1
E
e1
D
⍜
C
A2
A
A1
Dim.
Millimeters
Min. Max.
Inches
Dim.
Millimeters
Inches
Min.
Max.
0.0433
0.0039
0.394
Min.
1.15
0.65 BSC
1.30 BSC
0.10
Max.
Max.
Max.
A
A1
A2
b
C
D
0.80
0
1.10
0.10
1.00
0.40
0.26
2.20
2.40
0.0315
0
E1
e
e1
L
Q1
⍜
-
1.35
0.0453
0.0532
0.0256 BSC
0.0512 BSC
0.80
0.25
0.10
1.80
1.80
0.0315
0.0098
0.0039
0.0709
0.0709
0.0158
0.0102
0.0866
0.0945
0.30
0.40
30°
-
0.0039
0.0039
0.0118
0.0158
30°
0.10
0°
0°
-
E
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
830 series
Package outline - SOD523
D
c
Cathode
Mark
L1
E1
E
L
b1
⍜
A2
A
A1
DIM
Millimeters
Min. Max.
Inches
DIM
Millimeters
Inches
Min.
Max.
Min.
Max.
1.700
1.300
0.400
0.230
10°
Min.
Max.
A
A1
A2
b1
c
–
0.800
0.100
0.800
0.300
0.220
0.900
–
0.0314
0.0039
0.0314
0.0118
0.0086
0.0354
E
E1
L
1.500
1.100
0.200
0.170
4°
0.0590 0.0669
0.0433 0.0511
0.0078 0.0157
0.0066 0.0090
0.000
0.600
0.160
0.080
0.700
0.000
0.0236
0.0062
0.0031
0.0275
L1
U
-
4°
-
10°
-
D
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
6
www.zetex.com
830 series
Package outline - SOD323
Top mark
A
C
YZ
H
Partmark as example only
for orientation
Top view
G
D
F
C
A
B
E
DIM
Millimeters
DIM
Millimeters
Min.
Max.
1.16
0.10
-
Min.
Max.
0.200
1.77
A
B
C
D
0.91
0.00
-
E
F
0.127
1.52
1.11
2.46
G
H
1.37
0.33
0.40
2.71
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
7
www.zetex.com
830 series
Definitions
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1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Future device intended for production at some point. Samples may be available
Product status recommended for new designs
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“Not recommended for new designs” Device is still in production to support existing designs and production
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
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However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
8
www.zetex.com
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