ZC834B [DIODES]
Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt;
| 型号： | ZC834B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt 光电二极管 变容二极管 |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZC830/ A/ B
to
ZC836/ A/ B
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – J ANUARY 1998
1
3
FEATURES
2
*
*
*
Close Tolerance C-V Characteristics
High Tuning Ratio
1
Low IR
3
Enabling Excellent Phase Noise Performance
(IR Typically <200pA at 25V)
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
IF
MAX
200
UNIT
Fo rw a rd Cu rre n t
m A
m W
°C
Po w e r Dis s ip a tio n a t Ta m b =25°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
Pto t
330
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
=25°C)
am b
PARAMETER
SYMBOL MIN
TYP
MAX
UNIT CONDITIONS
Re ve rs e Bre a kd o w n
Vo lta g e
VBR
25
V
IR=10µA
Re ve rs e Vo lta g e Le a ka g e
IR
0.2
10
nA
VR=20V
Te m p e ra tu re Co e fficie n t
o f Ca p a cita n ce
0.03
0.04
%/°C VR=3V, f=1MHz
η
TUNING CHARACTERISTICS (at T
=25°C)
am b
Nom inal Capacitance (pF)
VR=2V, f=1MHz
Minim um
Q
Capacitance Ratio
C2 / C20
PART NO
@ VR=3V
f=50MHz
at f=1MHz
MIN
NOM
10.0
15.0
22.0
33.0
47.0
68.0
100.0
MAX
MIN
4.5
4.5
5.0
5.0
5.0
5.0
5.0
MAX
6.0
ZC830A
9.0
11.0
16.5
24.2
36.3
51.7
74.8
110.0
300
300
200
200
200
100
100
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
Note:
13.5
19.8
29.7
42.3
61.2
90.0
6.0
6.5
6.5
6.5
6.5
6.5
No suffix ±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice param eter data is available upon request for this device
ZC830/ A/ B
to
ZC836/ A/ B
PARTMARKING DETAILS
PART NO
ZC830
ZC831
ZC832
ZC833
ZC834
ZC835
ZC836
PARTMARK
PART NO
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
PARTMARK
J 1A
PART NO
ZC830B
ZC831B
ZC832B
ZC833B
ZC834B
ZC835B
ZC836B
PARTMARK
J 1B
J 1S
J 3S
J 3A
J 3B
J 4S
J 4A
J 4B
J 2S
J 2A
J 2B
J 5S
J 5A
J 5B
J 6S
J 6A
J 6B
J 7S
J 7A
J 7B
200
100
836A
835A
834A
833A
832A
10
831A
830A
1
1
10
100
Reverse Voltage (Volts)
Diode Capacitance
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