ZDT795A [DIODES]
SM-8 DUAL PNP MEDIUM POWER; SM - 8 DUAL PNP中功率型号: | ZDT795A |
厂家: | DIODES INCORPORATED |
描述: | SM-8 DUAL PNP MEDIUM POWER |
文件: | 总3页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - JULY 1999
ZDT795A
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – T795A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-140
-140
V
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
IC
-0.5
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
2.25
2.75
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT795A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -140
V
IC=-100µA, IE=0
Collector-Emitter
V(BR)CEO -140
V(BR)EBO -5
ICBO
V
V
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-100V
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
-0.1
-0.1
µA
µA
Emitter Cutoff Current IEBO
VEB=-4V, IE=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.3
V
V
V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
-0.3
-0.25
Base-Emitter
VBE(sat)
-0.95
V
V
IC=-500mA, IB=-50mA*
IC=-500mA, VCE=-2V*
Saturation Voltage
Base-Emitter
Turn-On Voltage
VBE(on)
-0.75
Static Forward Current hFE
Transfer Ratio
300
250
100
800
IC=-10mA, VCE=-2V*
IC=-200mA, VCE=-2V*
IC=-300mA, VCE=-2V*
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-5V
f=50MHz
Output Capacitance
Switching Times
Cobo
ton
15
pF
ns
ns
VCB=-10V f=1MHz
100
1900
IC=-100mA, VCC=-50V
I
B1=IB2=-10mA
toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZDT795A
TYPICAL CHARACTERISTICS
1.8
1.8
-55°C
+25°C
+100°C
+175°C
IC/IB=40
IC/IB=20
IC/IB=10
Tamb=25°C
IC/IB=40
1.6
1.4
1.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0
0.001
0.2
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
+25°C
VCE=2V
IC/IB=10
1.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-55°C
+100°C
+175°C
750
500
250
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
1
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
VCE=2V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC
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