ZSR500G [DIODES]
Fixed Positive Standard Regulator, 5VBIPolar, PDSO4, SOT-223, 4 PIN;
| 型号： | ZSR500G |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Fixed Positive Standard Regulator, 5VBIPolar, PDSO4, SOT-223, 4 PIN PC 光电二极管 输出元件 调节器 |
| 文件： | 总17页 (文件大小：653K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZSR SERIES
2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR
DEVICE DESCRIPTION
FEATURES
•
•
•
•
•
•
•
•
•
•
2.85 to 12 Volt
The ZSR Series three terminal fixed positive voltage
regulators feature internal circuit current limit and
thermal shutdown making the devices difficult to
destroy. The circuit design allows creation of any
custom voltage in the range 2.85 to 12 volts. The
devices are available in a small outline surface mount
package, ideal for applications where space saving is
important, as well as through hole TO92 style
packaging. The devices are suited to local voltage
regulation applications, where problems could be
encountered with distributed single source regulation,
as well as more general voltage regulation
applications.
Output current up to 200mA
Tight initial tolerance of 2.5%
Low 600a quiescent current
-55 to 125°C temperature range
No external components
Internal thermal shutdown
Internal short circuit current limit
Small outline SOT223 package
TO92 package
The ZSR Series show performance characteristics
superior to other local voltage regulators. The initial
output voltage is maintained to within 2.5% with a
quiescent current of typically 350µA. Output voltage
change, with input voltage and load current, is much
lower than competitive devices. The ZSR devices are
completely stable with no external components.
VOLTAGE RANGE
ZSR285
ZSR300
ZSR330
ZSR400
ZSR485
ZSR500
ZSR520
ZSR600
ZSR800
ZSR900
ZSR1000
ZSR1200
2.85V
3.0V
3.3V
4.0V
4.85V
5.0V
5.2V
6.0V
8.0V
9.0V
10.0V
12.0V
Issue 8 - April 2006
SEMICONDUCTORS
1
ZSR SERIES
ABSOLUTE MAXIMUM RATING
Input voltage
20V
Power Dissipation (Tamb=25°C)
SOT223
2W(Note 3)
Output Current(Io)
Operating Temperature
Storage Temperature
200mA
TO92
600mW
-55 to 125°C
-65 to 150°C
ELECTRICAL CHARACTERISTICS
Notes:
3. Maximum power dissipation for the SOT223 and
SO8 packages, is calculated assuming that the device
is mounted on a PCB measuring 2 inches square.
4. The shut down feature of the device operates if its
temperature exceeds its design limit as might occur
during external faults, short circuits etc. If the
regulator is supplied from an inductive source then a
large voltage transient, on the regulator input, can
result should the shut down circuit operate. It is
advised that a capacitor (1µF or greater) should be
applied across the regulator input to ensure that the
maximum voltage rating of the device is not
1. The maximum operating input voltage and output
current of the device will be governed by the
maximum power dissipation of the selected package.
Maximum package power dissipation is specified at
25 °C and must be linearly derated to zero at
Tamb=125°C.
2. The following data represents pulse test conditions
with junction temperatures as indicated at the
initiation of the test. Continuous operation of the
devices with the stated conditions might exceed the
power dissipation limits of the chosen package.
exceeded under shutdown conditions.
ZSR285 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=6.85V
SYMBOL PARAMETER
CONDITIONS
MIN.
2.78
TYP.
MAX.
2.92
UNITS
VO
Output Voltage
2.85
V
V
V
2.736
2.736
2.964
2.964
IO=1 to 200mA
τ
τ
Vin=4.85 to 20V
IO=1 to 100mA
Line Regulation
Load Regulation
Vin=4.85 to 20V
10
40
25
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
5
2
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current
Change
IO=1 to 200mA
100
100
∆lq
µA
µA
V
in=4.85 to 20V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
75
µV rms
Vin=5.85 to 18V
f=120Hz
∆Vin /∆VO
48
62
dB
Vin
Input Voltage Required
To Maintain Regulation
4.85
4.55
0.1
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA
τ
mV/°C
=Tj=-55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
2
ZSR SERIES
ZSR300 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=7V
SYMBOL PARAMETER
CONDITIONS
MIN.
2.92
2.88
2.88
TYP.
MAX.
3.08
3.12
3.12
UNITS
VO
Output Voltage
3.0
V
V
V
IO=1 to 200mA
τ
τ
Vin=5 to 20V
IO=1 to 100mA
Line Regulation
Load Regulation
Vin=5 to 20V
10
40
25
mV
∆VO
∆VO
I =1 to 200mA
5
2
mV
mV
IO =1 to 100mA
O
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=5 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
75
µV rms
Vin=6 to 18V
f=120Hz
∆Vin /∆VO
48
5
62
dB
Vin
Input Voltage Required To
Maintain Regulation
4.7
0.1
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA
τ
mV/°C
ZSR330 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=7.3V
SYMBOL PARAMETER
CONDITIONS
MIN.
3.218
3.168
3.168
TYP.
MAX.
3.382
3.432
3.432
UNITS
VO
Output Voltage
3.3
V
V
V
IO=1 to 200mA τ
Vin=5.3 to 20V
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=5.3 to 20V
7.5
30
25
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
5
2
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=5.3 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
50
64
5
µV rms
Vin=6.3 to 18V
f=120Hz
∆Vin /∆VO
50
dB
Vin
Input Voltage Required To
Maintain Regulation
5.3
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA τ
0.1
mV/°C
=Tj=-55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
3
ZSR SERIES
ZSR400 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=8V
SYMBOL PARAMETER
CONDITIONS
MIN.
3.9
TYP.
MAX.
4.1
UNITS
VO
Output Voltage
4.0
V
V
V
3.84
3.84
4.16
4.16
IO=1 to 200mA
τ
τ
Vin=6 to 20V
IO=1 to 100mA
Line Regulation
Load Regulation
Vin=6 to 20V
10
40
25
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
5
2
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current
Change
IO=1 to 200mA
100
100
∆lq
µA
µA
V
in=6 to 20V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
75
62
µV rms
Vin=7 to 18V
f=120Hz
48
6
dB
∆Vin /∆VO
Vin
Input Voltage Required
To Maintain Regulation
5.3
V
ZSR485 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=8.85V
SYMBOL PARAMETER
CONDITIONS
MIN.
4.729
4.656
4.656
TYP.
MAX.
4.971
5.044
5.044
UNITS
VO
Output Voltage
4.85
V
V
V
IO=1 to 200mA
τ
τ
Vin=6.8 to 20V
IO=1 to 100mA
Line Regulation
Load Regulation
Vin=6.85 to 20V
10
40
25
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
5
2
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current
Change
IO=1 to 200mA
Vin=6.85 to 20V
100
100
∆lq
µA
µA
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
50
64
µV rms
Vin=7.85 to 18V
f=120Hz
50
dB
∆Vin /∆VO
Vin
Input Voltage Required
To Maintain Regulation
6.85
6.55
0.1
V
Average Temperature
Coefficient of VO
mV/°C
∆VO /∆T
IO=5.0mA
τ
=Tj = -55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
4
ZSR SERIES
ZSR1000 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=14V
SYMBOL PARAMETER
CONDITIONS
MIN.
9.75
9.6
TYP.
MAX.
10.25
10.4
UNITS
VO
Output Voltage
10
V
V
V
IO=1 to 200mA τ
Vin=12 to 20V
9.6
10.4
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=12 to 20V
12
40
30
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
9
3
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
Vin=12 to 20V
100
100
∆lq
µA
µA
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
150
57
µV rms
Vin=13 to 18V
f=120Hz
∆Vin /∆VO
43
12
dB
Vin
Input Voltage Required To
Maintain Regulation
11.7
0.25
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA τ
mV/°C
ZSR1200 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=16V
SYMBOL PARAMETER
CONDITIONS
MIN.
11.7
TYP.
MAX.
12.3
UNITS
VO
Output Voltage
12
V
V
V
11.52
11.52
12.48
12.48
IO=1 to 200mA τ
Vin=14 to 20V
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=14 to 20V
12
40
30
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
9
3
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=14 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
150
57
µV rms
Vin=15 to 18V
f=120Hz
∆Vin /∆VO
43
14
dB
Vin
Input Voltage Required To
Maintain Regulation
13.7
0.25
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA τ
mV/°C
τ =Tj = -55 to 125 °C
Issue 8 - April 2006
SEMICONDUCTORS
5
ZSR285 ZSR300 ZSR400
ZSR900
ZSR SERIES
TYPICAL CHARACTERISTICS
Issue 8 - April 2006
SEMICONDUCTORS
6
ZSR285 ZSR300 ZSR400
ZSR900
ZSR SERIES
TYPICAL CHARACTERISTICS
5.72
5.70
5.68
5.66
3.01
ZSR300
3.00
2.99
2.98
I
o
= 5mA
o
I = 5mA
V
in= V + 4V
o
V
in= V + 4V
o
2.86
2.85
2.84
2.82
4.00
3.98
3.96
3.94
ZSR400
ZSR285
-25
25 50
125
75 100
-50
-25
0
25 50 75 100 125
-50
0
Temperature (°C)
Temperature (°C)
Output Voltage Temperature Coefficient
Output Voltage Temperature Coefficient
450
9.08
o
I = 0
ZSR900
I = 5mA
o
o
Vin=V + 4V
o
Vin= V + 4V
9.04
400
350
300
250
9.00
8.96
8.92
-25
25 50
125
-50
0
75 100
-25
25 50
125
75 100
-50
0
Temperature (°C)
Temperature (°C)
Output Voltage Temperature Coefficient
Quiescent Current v Temperature
500
2.5
2.0
1.5
1.0
400
300
200
Io=200mA
Io=100mA
V 0
o=
100
0.5
0
Vin=10V
0
-25
25 50
125
75 100
-50
0
-50
-25
0
25 50 75 100 125
Temperature (°C)
Temperature (°C)
Peak Output Current v Temperature
Drop-Out Voltage v Temperature
Issue 8 - April 2006
SEMICONDUCTORS
7
ZSR SERIES
ZSR600 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=10V
SYMBOL PARAMETER
CONDITIONS
MIN.
5.85
5.76
5.76
TYP.
MAX.
6.15
6.24
6.24
UNITS
VO
Output Voltage
6
V
V
V
IO=1 to 200mA τ
Vin=8 to 20V
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=8 to 20V
10
40
30
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
7
2.5
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=8 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
90
µV rms
Vin=9 to 18V
f=120Hz
∆Vin /∆VO
48
8
62
dB
Vin
Input Voltage Required To
Maintain Regulation
7.7
0.15
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA τ
mV/°C
τ =Tj = -55 to 125 °C
ZSR500 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=9V
SYMBOL PARAMETER
CONDITIONS
MIN.
4.875
4.8
TYP.
MAX.
5.125
5.2
UNITS
VO
Output Voltage
5
V
V
V
IO=1 to 200mA τ
Vin=7 to 20V
4.8
5.2
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=7 to 20V
10
40
25
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
5
2
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=7 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
75
µV rms
Vin=8 to 18V
f=120Hz
∆Vin /∆VO
48
7
62
dB
Vin
Input Voltage Required To
Maintain Regulation
6.7
0.1
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA τ
mV/°C
Issue 8 - April 2006
SEMICONDUCTORS
8
ZSR SERIES
ZSR520 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA,
SYMBOL PARAMETER
CONDITIONS
MIN.
5.070
4.99
TYP.
MAX.
5.330
5.41
UNITS
VO
Output Voltage
5.2
V
V
V
IO=1 to 200mA τ
Vin=7.2 to 20V
4.99
5.41
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=7.2 to 20V
10
40
25
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
5
2
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=7.2 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
75
µV rms
Vin=8.2 to 18V
f=120Hz
∆Vin /∆VO
48
62
dB
Vin
Input Voltage Required To
Maintain Regulation
7.2
6.9
0.1
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA τ
mV/°C
=Tj = -55 to 125 °C
ZSR900 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=13V
SYMBOL PARAMETER
CONDITIONS
MIN.
8.775
8.64
TYP.
MAX.
9.225
9.36
UNITS
VO
Output Voltage
9.0
V
V
V
IO=1 to 200mA
τ
τ
Vin=11 to 20V
IO=1 to 100mA
8.64
9.36
Line Regulation
Load Regulation
Vin=11 to 20V
12
40
30
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
9
3
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=11 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
150
57
µV rms
Vin=12 to 18V
f=120Hz
∆Vin /∆VO
43
11
dB
Vin
Input Voltage Required To
Maintain Regulation
10.7
0.25
V
Average Temperature
Coefficient of VO
∆VO /∆T
IO=5.0mA
τ
mV/°C
=Tj = -55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
9
ZSR330 ZSR500 ZSR600
ZSR800 ZSR1000
ZSR SERIES
TYPICAL CHARACTERISTICS
Issue 8 - April 2006
SEMICONDUCTORS
10
ZSR330 ZSR500 ZSR600
ZSR800 ZSR1000
ZSR SERIES
TYPICAL CHARACTERISTICS
4-38
Issue 8 - April 2006
SEMICONDUCTORS
11
ZSR SERIES
ZSR800 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=12V
SYMBOL PARAMETER
CONDITIONS
MIN.
7.8
TYP.
MAX.
8.2
UNITS
VO
Output Voltage
8
V
V
V
7.68
7.68
8.32
8.32
IO=1 to 200mA τ
Vin=10 to 20V
IO=1 to 100mA τ
Line Regulation
Load Regulation
Vin=10 to 20V
11
40
30
mV
∆VO
∆VO
I =1 to 200mA
IOO=1 to 100mA
8
3
mV
mV
lq
Quiescent Current
350
600
τ
µA
Quiescent Current Change IO=1 to 200mA
in=10 to 20V
100
100
∆lq
µA
µA
V
Vn
Output Noise Voltage
Ripple Rejection
f=10Hz to 10kHz
115
60
µV rms
Vin=11 to 18V
f=120Hz
∆Vin /∆VO
44
10
dB
Vin
Input Voltage Required To
Maintain Regulation
9.7
V
Average Temperature
Coefficient of VO
0.25
∆VO /∆T
IO=5.0mA τ
mV/°C
=Tj = -55 to 125°C
Issue 8 - April 2006
SEMICONDUCTORS
12
ZSR485 ZSR520
ZSR1200
ZSR SERIES
TYPICAL CHARACTERISTICS
4-38
Issue 8 - April 2006
SEMICONDUCTORS
13
ZSR SERIES
CONNECTION DIAGRAMS
TO92 Package Suffix – C
SOT223 Package Suffix – G
IN
GND
OUT
Top View –
Connect pin 4 to pin 2 or leave pin 4
electrically isolated
Bottom View
ORDERING INFORMATION
OPTIONS
Voltage
Voltage
Option
TO92
SOT223
Part No
Package
TO92
Partmark
ZSR ▲
2.85V
3.0V
3.3V
4.0V
4.85V
5.0V
5.2V
6.0V
8.0V
9.0V
10.0V
12.0V
285
300
330
400
485
500
520
600
800
900
1000
1200
ZSR ▲ C
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
ZSR ▲ G
SOT223
ZSR ▲
▲ Voltage Option
eg 3V device in TO92 package
part number ZSR300C
part marked ZSR300 *
eg 12V device in SOT223 package
part number ZSR1200G
part marked ZSR1200 *
SOT223 is supplied on tape in 7” reels of 1000, suffix
TA or 13” reels of 4000, suffix TC. Order code e.g.
ZSR300GTA.
TO92 is supplied loose in boxes of 4000, no suffix, or
taped and wound on a reel of 1500, suffix STOB, or
taped and folded in concertina form of 1500, suffix
STZ.
* NOTE: Exception. ZSR1000 part mark
is ZSR100 for all package options
Issue 8 - April 2006
SEMICONDUCTORS
14
ZSR SERIES
SCHEMATIC DIAGRAM
APPLICATIONS
Issue 8 - April 2006
SEMICONDUCTORS
15
ZSR485 ZSR520
ZSR1200
ZSR SERIES
TYPICAL CHARACTERISTICS
4-
Issue 8 - April 2006
SEMICONDUCTORS
16
ZSR SERIES
TYPICAL CHARACTERISTICS
© Zetex Semiconductors plc 2006
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These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services
concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or
service.
For the latest product information, log on to www.zetex.com
Issue 8 - April 2006
SEMICONDUCTORS
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