ZTX452 [DIODES]

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; NPN硅平面中功率晶体管
ZTX452
型号: ZTX452
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
NPN硅平面中功率晶体管

晶体 晶体管 局域网
文件: 总2页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NPN SILICON PLANAR  
ZTX452  
ZTX453  
MEDIUM POWER TRANSISTORS  
ISSUE 2 – MARCH 1994  
FEATURES  
*
*
*
100 Volt VCEO  
1 Amp continuous current  
Ptot = 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX452  
100  
ZTX453  
120  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
100  
5
2
1
1
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
ZTX452  
ZTX453  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
100  
120  
100  
5
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) 80  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
Collector Cut-Off  
Current  
0.1  
0.1  
0.7  
1.3  
150  
VCB=80V  
VCB=100V  
µA  
µA  
0.1  
0.1  
Emitter Cut-Off  
Current  
IEBO  
VEB=4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
hFE  
0.7  
1.3  
200  
V
IC=150mA, IB=15mA*  
IC=150mA, IB=15mA*  
Base-Emitter  
Saturation Voltage  
V
Static Forward  
Current Transfer  
Ratio  
40  
10  
40  
10  
IC=150mA, VCE=10V*  
IC=1A, VCE=10V*  
Transition  
Frequency  
fT  
150  
150  
MHz IC=50mA, VCE=10V  
f=100MHz  
Output Capacitance Cobo  
15  
15  
pF  
VCB=10V, f=1MHz  
3-177  
ZTX452  
ZTX453  
TYPICAL CHARACTERISTICS  
100  
0.8  
0.6  
0.4  
0.2  
80  
VCE=10V  
IC/IB=10  
60  
40  
20  
0
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
CE(sat)  
IC - Collector Current (Amps)  
hFE v IC  
C
v I  
V
2.2  
1.4  
1.2  
1.0  
2.0  
1.8  
1.6  
1.4  
VCE=10V  
IC/IB=10  
1.2  
1.0  
0.8  
0.6  
0.8  
0.6  
0.4  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
BE(sat)  
IC - Collector Current (Amps)  
BE(on)  
C
v I  
V
C
v I  
V
Single Pulse Test at Tamb=25°C  
10  
1
D.C.  
1s  
100ms  
10ms  
1.0ms  
300µs  
100µs  
0.1  
ZTX452  
ZTX453  
0.01  
0.1  
1
10  
100  
VCE - Collector Voltage (Volts)  
Safe Operating Area  
3-178  

相关型号:

ZTX452DA

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | CHIP
ETC

ZTX452DB

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | CHIP
ETC

ZTX452DC

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | CHIP
ETC

ZTX452DWP

Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH, G9, DIE-2
ZETEX

ZTX452K

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX452L

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX452M1

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX452M1TA

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
DIODES

ZTX452Q

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX452SM

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZTX452SMTA

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZTX452SMTC

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX