ZTX949 [DIODES]
Power Bipolar Transistor, 4.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3;型号: | ZTX949 |
厂家: | DIODES INCORPORATED |
描述: | Power Bipolar Transistor, 4.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体管 |
文件: | 总3页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94
ZTX949
FEATURES
*
*
*
*
*
*
*
4.5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltage
Excellent gain up to 20 Amps
Very low leakage
C
B
E
Exceptional gain linearity down to 10mA
Spice model available
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-50
-30
Collector-Emitter Voltage
Emitter-Base Voltage
V
-6
V
Peak Pulse Current
-20
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-4.5
A
Ptotp
1.58
W
W
°C
Ptot
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-50
-50
-30
-6
-80
-80
-45
-8
V
V
V
V
IC=-100µA
Collector-Emitter Breakdown
Voltag
IC=-1µA, RB ≤1KΩ
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
µA
VCB=-40V
VCB=-40V, Tamb=100°C
ICER
R ≤1KΩ
-50
-1
nA
µA
VCB=-40V
VCB=-40V, Tamb=100°C
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-40
-80
-100
-240
-60
mV
mV
mV
mV
IC=-0.5A, IB=-20mA*
IC=-1A, IB=-20mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-300mA*
-100
-160
-320
Base-Emitter
Saturation Voltage
VBE(sat)
-960
-1100 mV
IC=-5A, IB=-300mA*
3-312
ZTX949
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
VBE(on)
-860
-1000 mV
IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio
hFE
100
100
75
200
200
140
35
IC=-10mA, VCE=-1V
IC=-1A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-20A, VCE=-1V*
300
Transition Frequency
fT
100
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
122
VCB=-10V, f=1MHz
ton
toff
120
130
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
4.0
3.0
2.0
1.0
D.C.
150
t
1
D=t
1/tP
100
50
0
tP
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
-40 -20
0
20
0.0001 0.001
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-313
ZTX949
TYPICAL CHARACTERISTICS
-55°C
+25°C
+175°C
IC/IB=50
IC/IB=10
Tamb=25°C
IC/IB=10
1.6
1.6
1.4
1.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
VCE=1V
IC/IB=10
1.6
1.6
1.4
1.2
300
1.4
1.2
1.0
0.8
200
100
1.0
0.8
0.6
0.4
0.2
0.6
0.4
0.2
0
0.001
0
0.01
0.1
10 20
1
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
100
10
-55°C
+25°C
+100°C
VCE=1V
1.6
1.4
1.2
+175°C
1.0
0.8
0.6
0.4
0.2
D.C.
1s
100ms
10ms
1.0ms
0.1ms
1
0
0.001
0.01
0.1
1
10 20
0.1
0.1
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-314
相关型号:
ZTX949SM
Power Bipolar Transistor, 4.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZTX949STOA
Power Bipolar Transistor, 4.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZTX949STOB
Power Bipolar Transistor, 4.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZTX949STZ
Power Bipolar Transistor, 4.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZTX951SM
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZTX951SMTA
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZTX951STOA
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZTX951STOB
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
©2020 ICPDF网 联系我们和版权申明