ZVN0117TA [DIODES]
Small Signal Field-Effect Transistor, 0.16A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZVN0117TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.16A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 APRIL 94
ZVN0117TA
FEATURES
*
170 Volt BVDS
APPLICATIONS
Telephone handsets
*
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
170
UNIT
V
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
160
mA
A
IDM
2
Gate Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
700
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
170
V
ID=10µA, VGS=0V
Gate-Body Leakage
IGSS
IDSS
100
nA
VGS=± 15V, VDS=0V
Zero Gate Voltage Drain
Current
10
50
V
DS=170 V, VGS=0
DS=140 V, VGS=0V,
T=50°C(2)
µA
µA
V
On-State Drain Current(1)
ID(on)
100
mA VDS=3V, VGS=3.3V
Static Drain-Source
On-State Resistance (1)
RDS(on)
23
23
VGS=3.3V,ID=100mA
VGS=3V,ID=30mA
Ω
Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
PAGE NO
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