ZVN0540ASTOB [DIODES]
Small Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZVN0540ASTOB |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.09A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体 小信号场效应晶体管 |
| 文件： | 总1页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
ZVN0540A
FEATURES
*
*
400 Volt VDS
RDS(on)=50Ω
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
400
90
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
mA
mA
V
IDM
600
Gate-Source Voltage
VGS
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
700
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
400
V
ID=1mA, VGS=0V
ID=1mA, VDS= VGS
VGS=± 20V, VDS=0V
Gate-Source Threshold
Voltage
VGS(th)
1
3
V
Gate-Body Leakage
IGSS
IDSS
20
nA
Zero Gate Voltage Drain
Current
10
400
VDS=400 V, VGS=0
VDS=320 V, VGS=0V,
T=125°C(2)
µA
µA
On-State Drain Current(1)
ID(on)
150
100
mA VDS=25 V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
50
VGS=10V,ID=100mA
Ω
Forward Transconductance(1)(2gfs
)
mS
VDS=25V,ID=100mA
Input Capacitance (2)
Ciss
70
10
pF
pF
Common Source Output
Capacitance (2)
Coss
VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
4
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
7
ns
ns
ns
ns
7
VDD≈25V, ID=100mA
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
16
10
3-356
(
1
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