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ZVN2120ASMTC [DIODES]

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ZVN2120ASMTC
型号： ZVN2120ASMTC
厂家： DIODES INCORPORATED    DIODES INCORPORATED
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晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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SOT223 N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVN2120G  
ISSUE 2 - FEBRUARY 1996  
✪
FEATURES:  
D
*
*
VDS - 200V  
RDS(ON) - 10Ω  
S
PARTMARKING DETAIL - ZVN2120  
D
G
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VDS  
VALUE  
UNIT  
V
Dra in -S o u rce Vo lta g e  
200  
Co n tin u o u s Drain Cu rren t at Ta m b=25°C  
Pu ls ed Dra in Cu rre n t  
ID  
320  
m A  
A
IDM  
2
Ga te-S o u rce Vo lta g e  
VGS  
V
± 20  
2
Po w er Dis s ip a tio n a t Ta m b=25°C  
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e  
Pto t  
W
Tj:Ts tg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
S YMBOL MIN. MAX. UNIT CONDITIONS .  
Dra in -S o u rce Bre akd o w n  
Vo lta g e  
BVDS S  
200  
V
ID=1m A, VGS=0V  
Gate-Sou rce Threshold Voltage VGS (th )  
1
3
V
ID=1m A, VDS= VGS  
Ga te-Bo d y Lea ka g e  
IGS S  
IDS S  
20  
n A  
V
GS=± 20V, VDS=0V  
Ze ro Ga te Vo lta g e Dra in  
Cu rre n t  
10  
100  
VDS=200V, VGS=0V  
VDS=160V, VGS=0V,  
T=125°C(2)  
µA  
µA  
On -S ta te Dra in Cu rre n t(1)  
ID(o n )  
500  
100  
m A  
VDS=25V, VGS=10V  
VGS=10V, ID=250m A  
S tatic Drain -S o u rce On -S ta te  
Res ista n ce (1)  
RDS (o n )  
10  
Ω
Forward Transconductance(1)(2) g fs  
m S  
p F  
p F  
VDS=25V, ID=250m A  
In p u t Ca p a cita n ce (2)  
Cis s  
Co s s  
85  
20  
Co m m o n S o u rce Ou tp u t  
Cap acita n ce (2)  
VDS=25V, VGS=0V, f=1MHz  
Reverse Transfer Capacitance (2) Crs s  
7
p F  
n s  
n s  
n s  
n s  
Tu rn -On De la y Tim e (2)(3)  
Ris e Tim e (2)(3)  
td (o n )  
8
tr  
8
VDD≈25V, ID=250m A  
Tu rn -Off De la y Tim e (2)(3)  
Fa ll Tim e (2)(3)  
td (o ff)  
tf  
20  
12  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.  
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator  
3 - 390  
ZVN2120G  
TYPICAL CHARACTERISTICS  
2.0  
1.4  
VGS=10V  
1.2  
1.0  
8V  
7V  
6V  
VGS=  
1.6  
1.2  
10V  
8V  
7V  
6V  
5V  
5V  
4V  
0.8  
0.6  
0.4  
4V  
0.8  
0.4  
0
3V  
2V  
3V  
2V  
0.2  
0
0
2
4
6
8
10  
0
10  
20  
30  
40  
50  
VDS - Drain Source Voltage (Volts)  
VDS - Drain Source Voltage (Volts)  
Output Characteristics  
Saturation Characteristics  
VDS=  
25V  
20  
1.6  
1.4  
1.2  
1.0  
16  
12  
8
10V  
0.8  
0.6  
0.4  
0.2  
ID=  
1.0A  
4
0
0.5A  
0.1A  
0
0
1
2
3
4
5
6
7
8
9
10  
0
2
4
6
8
10  
VGS-Gate Source Voltage (Volts)  
GS-  
V
Gate Source  
Voltage (Volts)  
Transfer Characteristics  
Voltage Saturation Characteristics  
100  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
V
GS=10V  
ID=250mA  
ID=  
1.0A  
10  
0.5A  
0.1A  
VGS=VDS  
ID=1m A  
1.0  
0.8  
0.6  
1
-40  
80  
120  
100 140 160 180  
-20  
0
20 40 60  
1
2
3
4
5
6
7
8 9 10  
20  
VGS-Gate Source Voltage (Volts)  
Tj-Junction Temperature (°C)  
Normalised RDS(on) and VGS(th) v Temperature  
On-resistance vs gate-source voltage  
3 - 391  
ZVN2120G  
TYPICAL CHARACTERISTICS  
500  
500  
400  
300  
400  
300  
VDS=25V  
VDS=25V  
200  
100  
200  
100  
0
0
0.2  
0.6 0.8 1.0 1.2  
1.6 1.8 2.0  
0.4  
1.4  
0
0
2
4
6
8
10  
VGS-Gate Source Voltage (Volts)  
ID(on)- Drain Current (Amps)  
Transconductance v drain current  
Transconductance v gate-source voltage  
16  
100  
VDS=  
14  
D=  
I 700m A  
50V  
100V  
150V  
80  
60  
40  
20  
12  
10  
8
Ciss  
6
4
2
0
Coss  
Crss  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
Q-Charge (nC)  
0
10  
20  
40  
50  
30  
VDS-Drain Source Voltage (Volts)  
Gate charge v gate-source voltage  
Capacitance v drain-source voltage  
3 - 392  

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