ZVN4306AV [DIODES]

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; N沟道增强型垂直DMOS FET
ZVN4306AV
型号: ZVN4306AV
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
N沟道增强型垂直DMOS FET

晶体 小信号场效应晶体管 开关
文件: 总4页 (文件大小:187K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVN4306AV  
ISSUE 1 – FEBRUARY 95  
FEATURES  
*
*
*
60 Volt VDS  
RDS(on)= 0.33  
Repetitive Avalanche Rating  
D
G
S
APPLICATIONS  
*
*
*
Solenoids / relay drivers for automotive  
Stepper Motor Drivers  
DC-DC convertors  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
60  
UNIT  
Drain-Source Voltage  
VDS  
ID  
V
A
A
Continuous Drain Current at Tamb=25°C  
1.1  
Practical Continuous Drain Current at  
IDP  
1.3  
T
amb=25°C  
Pulsed Drain Current  
IDM  
15  
± 20  
A
V
Gate Source Voltage  
VGS  
Ptot  
Power Dissipation at Tamb=25°C  
Practical Power Dissipation at Tamb=25°C*  
Avalanche Current-Repetitive  
Avalanche Energy-Repetitive  
Operating and Storage Temperature Range  
850  
mW  
W
Ptotp  
IAR  
1.13  
1
A
EAR  
25  
mJ  
°C  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.  
with copper equal to 1 inch square minimum  
ZVN4306AV  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Drain-Source  
BVDSS  
60  
V
ID=1mA, VGS=0V  
ID=1mA, VDS= VGS  
Breakdown Voltage  
Gate-Source  
Threshold Voltage  
VGS(th)  
1.3  
3
V
Gate-Body Leakage  
IGSS  
IDSS  
100  
nA  
V
GS=± 20V, VDS=0V  
Zero Gate Voltage  
Drain Current  
10  
100  
V
V
DS=60V, VGS=0  
DS=48V, VGS=0V, T=125°C(2)  
µA  
µA  
On-State Drain  
Current(1)  
ID(on)  
12  
A
VDS=10V, VGS=10V  
Static Drain-Source  
On-State Resistance  
(1)  
RDS(on)  
0.22  
0.32  
0.33  
0.45  
V
V
GS=10V,ID=3A  
GS=5V, ID=1.5A  
Forward  
gfs  
700  
mS  
VDS=25V,ID=3A  
Transconductance  
(1)(2)  
Input Capacitance (2)  
Ciss  
350  
140  
pF  
pF  
Common Source  
Output Capacitance (2)  
Coss  
VDS=25 V, VGS=0V, f=1MHz  
Reverse Transfer  
Capacitance (2)  
Crss  
30  
8
pF  
ns  
Turn-On Delay Time  
(2)(3)  
td(on)  
V
DD 25V, VGEN=10V, ID=3A  
Rise Time (2)(3)  
tr  
25  
30  
ns  
ns  
Turn-Off Delay Time  
(2)(3)  
td(off)  
Fall Time (2)(3)  
tf  
16  
ns  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
(2) Sample test.  
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator  
ZVN4306AV  
TYPICAL CHARACTERISTICS  
VGS=  
10V  
12V  
9V  
8V  
20V  
VGS=3V  
3.5V  
6V  
5V  
12  
11  
10  
10  
7V  
9
8
7
6
5
6V  
5V  
1.0  
8V  
4
3
2
1
10V  
4V  
3.5V  
3V  
0
0.1  
0
1
2
3
4
5
6
7
8
9
10  
100  
0.1  
1
10  
VDS - Drain Source Voltage (Volts)  
ID-Drain Current (Amps)  
Saturation Characteristics  
On-resistance v drain current  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
5
V
GS=10V  
ID=3A  
4
3
V
DS=10V  
1.4  
1.2  
1.0  
0.8  
0.6  
2
1
V
GS=  
VDS  
ID=1mA  
Gate Threshold Voltage VGS(TH)  
150  
175 200 225  
0
-50  
100  
-25  
0
25 50 75  
125  
0
2
6
8
10 12  
16 18 20  
4
14  
ID(on)- Drain Current (Amps)  
Tj-Junction Temperature (°C)  
Transconductance v drain current  
Normalised RDS(on) and VGS(th) v Temperature  
VDD=  
16  
14  
20V  
40V  
60V  
500  
400  
300  
I
D=3A  
12  
10  
8
C
iss  
200  
100  
0
6
4
2
0
C
oss  
C
rss  
0
10  
20  
30 40  
50  
60  
70  
80  
0
1
2
3
4
5
6
7
8
9
10 11 12  
VDS-Drain Source Voltage (Volts)  
Q-Charge (nC)  
Capacitance v drain-source voltage  
Gate charge v gate-source voltage  
ZVN4306AV  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
MAX.  
UNIT  
Thermal Resistance:Junction to Ambient  
Junction to Case  
Rth(j-amb)  
Rth(j-case)  
150  
50  
°C/W  
°C/W  
/t  
T -Temperature (°C)  
Pulse Width (seconds)  
Derating curve  
Maximum transient thermal impedance  
Note: Unclamped Inductive Test  
Note: Unclamped Inductive Test  
L=43mH, Vcc=12V  
1.0  
L=43mH, Vcc=12V  
25  
0.8  
0.6  
0.4  
0.2  
20  
15  
10  
5
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100 125  
150  
TJ - Junction Temperature (°C)  
TJ - Junction Temperature (°C)  
Maximum Repetitive Avalanche Energy  
v Junction Temperature.  
Maximum Repetitive Avalanche Current  
v Junction Temperature  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)  
Fax: (44)161-627 5467  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 1997  
Internet:  
http://www.zetex.com  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied  
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or  
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any  
product or service.  

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