ZVN4424ZTA [DIODES]
Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | ZVN4424ZTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 开关 晶体管 |
| 文件： | 总4页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NOT RECOMMENDED FOR NEW DESIGN USE DMN30H4D0L
SOT89 N-CHANNEL ENHANCEMENT
ZVN4424Z
MODE VERTICAL DMOS FET
ISSUE 1 - NOVEMBER 1998
FEATURES
*
*
*
240 Volt BVDS
Extremely low RDS(on)=4.3Ω
Low threshold and Fast switching
D
APPLICATIONS
*
*
*
*
Earth recall and dialling switches
Electronic hook switches
Battery powered equipment
Telecoms and high voltage dc-dc convertors
S
D
G
PARTMARKING DETAILS -
COMPLEMENTARY TYPE -
N24
ZVP4424Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
YMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
240
300
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
mA
A
IDM
1.0
Gate Source Voltage
VGS
V
± 40
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
1 †
W
Tj:Tstg
-55 to +150
°C
†
recommended Ptot calculated using FR4 measuring 15x15x0.6mm
Refer to the handlnstructions for soldering surface mount components.
ZVN4424Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
240
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
1.3
1.4
1.8
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
ID(on)
IDSS
100
nA
A
VGS=± , VDS=0V
On State Drain-Current
0.8
0.4
VDS=S=10V
Zero Gate Voltage Drain
Current
10
100
V
V
DS=240 V, VGS=0V
µA
µA
DS=0 V, VGS=0V, T=125°C
Static Drain-Source
On-State Resistance
RDS(on)
gfs
4
4.3
5.5
6
VGS=10V,ID=500mA*
VGS=2.5V,ID=100mA*
Ω
Ω
Forward
Transconductance (1) (2)
0.75
S
VDS=10V,ID=0.5A
Input Capacitance (2)
Ciss
10
15
200
25
pF
pF
Common Source Output
Capacitance (2)
Coss
V
V
DS=25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
3.5
15
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
t(on)
tr
2.5
5
5
ns
ns
ns
ns
8
DD ≈50V, ID =0.25A, VGEN=10V
Turn-Off Delay Time (23) td(off)
Fall Time (2)(3) tf
40
16
60
25
(1) Measured undelsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
TAL CHARACTERISTICS
1
0.1
DC
1s
100ms
10ms
1ms
0.01
100µs
0.001
1
10
100
1k
VDS - Drain Source Voltage (V)
Safe Operating Area
ZVN4424Z
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
300µs Pulsed Test
VGS=10V
1.4
5V
4V
1.2
1.0
0.8
0.6
0.4
0.2
0
3V
Test
VD
2.5V
2V
0
2
4
6
8
10
2
4
6
8
1
VS - Gate Source Voltae (Volts)
VDS - Drain Source Voltage (Volts)
Transfer Characteristics
Saturation Characteristics
800
800
600
40
200
0
600
400
200
0
300µs Pulsed Test
VDS=10V
300s Pulsed est
VS=10Vz
0
0.2
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
-Gate Source Voltage (Volts)
I - rain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
2.4
V
VGS=10V
ID=0.5A
2.0
1.6
2.5V
3V
10V
10
1.2
0.8
VGS=VDS
ID=1mA
300µs Pulsed Test
0.4
0
1.0
0.01
0.1
1.0
10
-50
-25
0
25
50
75
100 125 150
ID-Drain Current (Amps)
Junction Temperature (°C)
Normalised R
and V
vs Temperature
On-resistance vs Drain Current
ZVN4424Z
TYPICAL CHARACTERISTICS
14
12
250
200
VV
50V
100V
Note:VGS=0V
D=
Note:I 400mA
10
8
150
100
50
Ciss
6
4
Coss
Crss
2
0
0
0
2
4
6
8
10
12
1
16
18
20
0.1
1
10
100
V
-Drain Source Voltage (Volts)
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gat-source voltage
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