ZX5T2E6 [DIODES]
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6; 20V PNP低SAT中功率晶体管SOT23-6
| 型号： | ZX5T2E6 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 |
| 文件： | 总6页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZX5T2E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
BV = -20V : R
= 31m ; I = -3.5A
CEO
SAT
C
DESCRIPTION
Pa c ka ge d in t he S OT2 3 -6 out line t his ne w 5 t h
generation low saturation 20V PNP transistor offers
extremely low on state losses making it ideal for use in
DC-DC c irc uit s a nd va rious driving a nd pow e r
management functions.
FEATURES
SOT23-6
• 3.5 Amps continuous current
• Extremely low saturation voltage (-70mV max @ 1A/100mA )
• Up to 10 Amps peak current
• Very low saturation voltages
APPLICATIONS
• DC - DC converters
• Battery charging
• Power switches
• Motor control
• Power management functions
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
QUANTITY PER REEL
TAPE WIDTH
7 ”
8mm embossed
8mm embossed
3,000
ZX5 T2 E6 TA
ZX5 T2 E6 TC
1 3 ”
10,000
DEVICE MARKING
• 52
TOP VIEW
ISSUE 1 - MAY 2004
S E M IC O N D U C T O R S
1
ZX5T2E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
-25
UNIT
Collector-bas e voltage
Collector-emitter voltage
Emitter-bas e voltage
Continuous collector current
BV
V
CBO
BV
BV
-20
V
CEO
EBO
-7.5
V
I
I
-3.5
A
A
C
Peak puls e current
(a )
-10
CM
P
W
Pow er dis s ipation at T = 2 5 ° C
1.1
D
D
A
mW/° C
Linear derating factor
(b)
8.8
Pow er dis s ipation at T = 2 5 ° C
A
P
W
1.7
Linear derating factor
mW/° C
13.6
-55 to + 150
Operating and s torage temperature range
T , T
° C
j
s t g
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
113
UNIT
° C/W
° C/W
(a )
J unction to ambient
R
R
⍜J A
⍜J C
(b)
J unction to ambient
73
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t< 5 seconds.
ISSUE 1 - MAY 2004
S E M IC O N D U C T O R S
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ZX5T2E6
CHARACTERISTICS
ISSUE 1 - MAY 2004
S E M IC O N D U C T O R S
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ZX5T2E6
ELECTRICAL CHARACTERISTICS (at T
= 25° C unless otherwise stated)
amb
PARAMETER
SYMBOL
MIN.
-25
TYP. MAX. UNIT CONDITIONS
Collector-bas e breakdow n voltage
Collector-emitter breakdow n voltage
Emitter-bas e breakdow n voltage
Collector cut-off current
BV
-49
-43
V
V
I
I
I
=
=
=
-1 0 0 A
-1 0 mA *
-1 0 0 A
CBO
C
C
E
BV
BV
-20
CEO
EBO
-7.5
-8.4
V
I
I
I
-100
-100
-100
-15
nA
nA
nA
mV
mV
mV
V
V
V
V
=
-2 0 V
-2 0 V
-6 V
CBO
CB
CB
EB
Collector cut-off current
=
=
CES
EBO
Emitter cut-off current
Collector-emitter s aturation voltage
V
-10
-100
-110
-0.96
-0.8
575
450
285
40
I
I
I
=
=
=
-0 .1 A, I =
-1 0 mA*
-1 0 mA*
CE(S AT)
C
B
-140
-130
-1.1
-0.9
-1 A, I
=
B
C
B
-3 .5 A, I
-3 .5 A, I
=
-3 5 0 mA*
-3 5 0 mA*
C
Bas e-emitter s aturation voltage
Bas e-emitter turn-on voltage
V
V
I
=
=
=
=
=
=
=
=
BE(S AT)
BE(ON)
FE
C
B
V
I
-3 .5 A, V
=
-2 V *
C
C
C
C
C
CE
Static forw ard current trans fer ratio
h
300
300
150
10
I
I
I
I
I
-1 0 mA, V
= -2 V *
CE
=
900
-1 A, V
-2 V *
-2 V *
-2 V *
-1 0 V
CE
-3 .5 A, V
-1 0 A, V
=
CE
=
CE
Trans ition frequency
f
110
-5 0 mA, V
=
CE
T
C
f = 5 0 MHz
-1 0 V, f = 1 MHz *
-2 A, V -1 0 V,
-4 0 mA
Output capacitance
Sw itching times
C
45
90
pF
ns
ns
V
=
CB
OBO
t
t
I
I
=
=
CC
ON
OFF
C
325
=
I
=
B1
B2
NOTES
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2% .
ISSUE 1 - MAY 2004
S E M IC O N D U C T O R S
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ZX5T2E6
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2004
S E M IC O N D U C T O R S
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ZX5T2E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
Millimeters
Inches
Min Max
DIM
DIM
Min
Max
1.45
0.15
1.30
0.50
0.26
3.10
Min
Max
Min
Max
3.20
1.80
0.60
A
A1
A2
b
0.90
0.00
0.90
0.20
0.09
2.70
0.035
0.00
0.057
0.006
0.051
0.020
0.010
0.122
E
E1
L
2.20
1.30
0.10
0.0866 0.118
0.0511 0.071
0.035
0.008
0.003
0.106
0.004
0.037 REF
0.075 REF
0° 30°
0.024
e
0.95 REF
1.90 REF
0° 30°
C
e1
⍜
D
©Zetex Semiconductors plc 2004
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ISSUE 1 - MAY 2004
S E M IC O N D U C T O R S
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