ZX5T2E6 [DIODES]

20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6; 20V PNP低SAT中功率晶体管SOT23-6
ZX5T2E6
型号: ZX5T2E6
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
20V PNP低SAT中功率晶体管SOT23-6

晶体 晶体管
文件: 总6页 (文件大小:105K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZX5T2E6  
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6  
SUMMARY  
BV = -20V : R  
= 31m ; I = -3.5A  
CEO  
SAT  
C
DESCRIPTION  
Pa c ka ge d in t he S OT2 3 -6 out line t his ne w 5 t h  
generation low saturation 20V PNP transistor offers  
extremely low on state losses making it ideal for use in  
DC-DC c irc uit s a nd va rious driving a nd pow e r  
management functions.  
FEATURES  
SOT23-6  
3.5 Amps continuous current  
Extremely low saturation voltage (-70mV max @ 1A/100mA )  
Up to 10 Amps peak current  
Very low saturation voltages  
APPLICATIONS  
DC - DC converters  
Battery charging  
Power switches  
Motor control  
Power management functions  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
QUANTITY PER REEL  
TAPE WIDTH  
7 ”  
8mm embossed  
8mm embossed  
3,000  
ZX5 T2 E6 TA  
ZX5 T2 E6 TC  
1 3 ”  
10,000  
DEVICE MARKING  
52  
TOP VIEW  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
1
ZX5T2E6  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
LIMIT  
-25  
UNIT  
Collector-bas e voltage  
Collector-emitter voltage  
Emitter-bas e voltage  
Continuous collector current  
BV  
V
CBO  
BV  
BV  
-20  
V
CEO  
EBO  
-7.5  
V
I
I
-3.5  
A
A
C
Peak puls e current  
(a )  
-10  
CM  
P
W
Pow er dis s ipation at T = 2 5 ° C  
1.1  
D
D
A
mW/° C  
Linear derating factor  
(b)  
8.8  
Pow er dis s ipation at T = 2 5 ° C  
A
P
W
1.7  
Linear derating factor  
mW/° C  
13.6  
-55 to + 150  
Operating and s torage temperature range  
T , T  
° C  
j
s t g  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
113  
UNIT  
° C/W  
° C/W  
(a )  
J unction to ambient  
R
R
J A  
J C  
(b)  
J unction to ambient  
73  
NOTES  
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(b) As above measured at t< 5 seconds.  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
2
ZX5T2E6  
CHARACTERISTICS  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
3
ZX5T2E6  
ELECTRICAL CHARACTERISTICS (at T  
= 2 C unless otherwise stated)  
amb  
PARAMETER  
SYMBOL  
MIN.  
-25  
TYP. MAX. UNIT CONDITIONS  
Collector-bas e breakdow n voltage  
Collector-emitter breakdow n voltage  
Emitter-bas e breakdow n voltage  
Collector cut-off current  
BV  
-49  
-43  
V
V
I
I
I
=
=
=
-1 0 0 A  
-1 0 mA *  
-1 0 0 A  
CBO  
C
C
E
BV  
BV  
-20  
CEO  
EBO  
-7.5  
-8.4  
V
I
I
I
-100  
-100  
-100  
-15  
nA  
nA  
nA  
mV  
mV  
mV  
V
V
V
V
=
-2 0 V  
-2 0 V  
-6 V  
CBO  
CB  
CB  
EB  
Collector cut-off current  
=
=
CES  
EBO  
Emitter cut-off current  
Collector-emitter s aturation voltage  
V
-10  
-100  
-110  
-0.96  
-0.8  
575  
450  
285  
40  
I
I
I
=
=
=
-0 .1 A, I =  
-1 0 mA*  
-1 0 mA*  
CE(S AT)  
C
B
-140  
-130  
-1.1  
-0.9  
-1 A, I  
=
B
C
B
-3 .5 A, I  
-3 .5 A, I  
=
-3 5 0 mA*  
-3 5 0 mA*  
C
Bas e-emitter s aturation voltage  
Bas e-emitter turn-on voltage  
V
V
I
=
=
=
=
=
=
=
=
BE(S AT)  
BE(ON)  
FE  
C
B
V
I
-3 .5 A, V  
=
-2 V *  
C
C
C
C
C
CE  
Static forw ard current trans fer ratio  
h
300  
300  
150  
10  
I
I
I
I
I
-1 0 mA, V  
= -2 V *  
CE  
=
900  
-1 A, V  
-2 V *  
-2 V *  
-2 V *  
-1 0 V  
CE  
-3 .5 A, V  
-1 0 A, V  
=
CE  
=
CE  
Trans ition frequency  
f
110  
-5 0 mA, V  
=
CE  
T
C
f = 5 0 MHz  
-1 0 V, f = 1 MHz *  
-2 A, V -1 0 V,  
-4 0 mA  
Output capacitance  
Sw itching times  
C
45  
90  
pF  
ns  
ns  
V
=
CB  
OBO  
t
t
I
I
=
=
CC  
ON  
OFF  
C
325  
=
I
=
B1  
B2  
NOTES  
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2% .  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
4
ZX5T2E6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
5
ZX5T2E6  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
Controlling dimensions are in millimeters. Approximate conversions are given in inches  
PACKAGE DIMENSIONS  
Millimeters  
Inches  
Millimeters  
Inches  
Min Max  
DIM  
DIM  
Min  
Max  
1.45  
0.15  
1.30  
0.50  
0.26  
3.10  
Min  
Max  
Min  
Max  
3.20  
1.80  
0.60  
A
A1  
A2  
b
0.90  
0.00  
0.90  
0.20  
0.09  
2.70  
0.035  
0.00  
0.057  
0.006  
0.051  
0.020  
0.010  
0.122  
E
E1  
L
2.20  
1.30  
0.10  
0.0866 0.118  
0.0511 0.071  
0.035  
0.008  
0.003  
0.106  
0.004  
0.037 REF  
0.075 REF  
0° 30°  
0.024  
e
0.95 REF  
1.90 REF  
0° 30°  
C
e1  
D
©Zetex Semiconductors plc 2004  
Europe  
Americas  
Asia Pacific  
Corporate Headquaters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
#
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