ZXMC10A816N8 [DIODES]
100V SO8 Complementary Dual enhancement mode MOSFET; 100V SO8互补双增强型MOSFET
| 型号： | ZXMC10A816N8 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V SO8 Complementary Dual enhancement mode MOSFET |
| 文件： | 总11页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMC10A816N8
100V SO8 Complementary Dual enhancement mode
MOSFET
Summary
ID (A)
TA= 25°C
Device V(BR)DSS (V) QG (nC)
RDS(on) (Ω)
0.230 @ VGS= 10V
0.300 @ VGS= 4.5V
0.235 @ VGS= -10V
0.320 @ VGS= -4.5V
2.1
Q1
Q2
100
9.2
1.9
-2.2
-1.9
-100
16.5
Description
This new generation complementary dual MOSFET
D1
D2
features low on-resistance achievable with low gate drive.
Features
G1
G2
•
•
•
•
100 V Complementary in SOIC package
Low on-resistance
S1
S2
Fast switching speed
Low voltage (VGS = 4.5 V) gate drive
Q1 N-Channel
Q2 P-Channel
Applications
•
•
•
DC motor control
Backlighting
S1
G1
S2
G2
D1
D1
D2
D2
Class D Audio Output Stages (<100W)
Ordering information
Device
Reel size Tape width Quantity
(inches)
(mm)
per reel
Top view
ZXMC10A816N8TC
13
12
2,500
Device marking
ZXMC
10A816
Issue 1.3 - March 2009
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ZXMC10A816N8
Absolute maximum ratings
Parameter
Symbol
N-
P-
Unit
channel channel
Q1
Q2
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
100
-100
V
V
±20
±20
(b)(d)
(b)(d)
(a)(d)
(a)(e)
(f)(d)
2.1
1.7
1.7
2.0
2.3
-2.2
-1.8
-1.7
-2.0
-2.4
A
ID
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
(c)(d)
IDM
9.4
3.0
9.4
-10.5
-3.1
A
A
A
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)(d)
Continuous Source current (Body diode) at TA =25°C
IS
(c)(d)
-10.5
Pulsed Source current (Body diode) at TA =25°C
ISM
PD
(a)(d)
1.3
W
Power dissipation at TA =25°C
10.0
mW/°C
Linear derating factor
(a)(e)
1.8
14.2
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
P
P
P
D
D
D
(b)(d)
2.1
16.7
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(f)(d)
2.6
2.4
W
Power dissipation at TL =25°C
mW/°C
20.4
Linear derating factor
18.9
T , T
Operating and storage temperature range
-55 to 150
j
stg
°C
Thermal resistance
Parameter
Symbol
Value
Unit
°C/W
°C/W
°C/W
°C/W
(a)(d)
R
θJA
100
Junction to ambient
(a)(e)
R
θJA
70
60
Junction to ambient
(b)(d)
R
θJA
Junction to ambient
(f)(d)
R
θJL
53
49
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions; the device is measured when operating in a steady-state condition.
(b) Same as note (a), except the device is measured at t ≤ 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition.
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ZXMC10A816N8
Thermal characteristics
10
10
1
RDS(ON)
RDS(ON)
Limited
Limited
1
DC
DC
1s
100ms
10ms
1s
100m
100m
10m
100ms
10ms
Note (a)(d)
Note (a)(d)
1ms
10
1ms
10
10m
100us
Single Pulse, Tamb=25°C
1
Single Pulse, Tamb=25°C
1
100us
0.1
100
0.1
100
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
2.0
100
80
1.5
1.0
0.5
0.0
Two active die
One active die
D=0.5
60
40
Single Pulse
D=0.2
20
D=0.05
D=0.1
0
100µ 1m 10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Single Pulse
Tamb=25°C
100
10
1
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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ZXMC10A816N8
Q1 (N-channel) electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
100
V
V(BR)DSS
ID = 250µA, VGS= 0V
Zero Gate voltage Drain
current
IDSS
0.5
100
3.0
µA
nA
VDS= 100V, VGS= 0V
VGS= ±20V, VDS= 0V
ID= 250µA, VDS= VGS
IGSS
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
1.0
V
Static Drain-Source
V
GS= 10V, ID= 1.0A
0.170
0.210
0.230
0.300
RDS(on)
(a)
ꢀ
on-state resistance
VGS= 4.5V, ID= 0.5A
Forward
gfs
(a) (c)
4.8
S
VDS= 15V, ID= 1.6A
Transconductance
Dynamic
(c)
Capacitance
497
29
Input capacitance
Output capacitance
Ciss
pF
pF
VDS= 50V, VGS= 0V
f= 1MHz
Coss
Reverse transfer
capacitance
Crss
18
pF
(b) (c)
Switching
Turn-on-delay time
Rise time
2.9
2.1
ns
ns
ns
ns
td(on)
tr
td(off)
tf
V
DD= 50V, VGS= 10V
ID= 1.0A
Turn-off delay time
Fall time
12.1
5.0
RG 6.0Ω,
(c)
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
9.2
1.7
2.5
nC
nC
nC
Qg
VDS= 50V, VGS= 10V
ID= 1.6A
Qgs
Qgd
(a)
IS= 1.7A, VGS= 0V
Diode forward voltage
0.85
32
0.95
V
VSD
trr
(c)
ns
nC
Reverse recovery time
IS= 1.7A, di/dt= 100A/µs
(c)
40
Qrr
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.3 - March 2009
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ZXMC10A816N8
Q1 (N-channel) typical characteristics
5V
10V
10V
T = 25°C
T = 150°C
10
1
10
1
5V
4.5V
4V
4.5V
4V
3.5V
3.5V
VGS
3V
3V
VGS
0.1
0.01
0.1
0.01
2.5V
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 1.6A
T = 150°C
1
0.1
RDS(on)
T = 25°C
VGS(th)
VGS = VDS
ID = 250uA
VDS = 10V
0.01
2.0
2.5
3.0
3.5
4.0
4.5
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Tj Junction Temperature (°C)
Normalised Curvesv Temperature
10
3V
T = 25°C
10
1
VGS
T = 150°C
1
3.5V
T = 25°C
4V
4.5V
5V
0.1
10V
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID Drain Current (A)
On-Resistance v Drain Current
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ZXMC10A816N8
Q1 (N-channel) typical characteristics –continued
700
600
500
400
300
200
100
0
10
8
VGS = 0V
f = 1MHz
ID = 1.6A
C
ISS
6
COSS
4
CRSS
2
VDS = 50V
0
0.1
1
10
100
0
2
4
6
8
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMC10A816N8
Q1 (P-channel) electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
-100
V
V(BR)DSS
ID = -250µA, VGS= 0V
Zero Gate voltage Drain
current
IDSS
-0.5
100
-4.0
µA
nA
VDS= -100V, VGS= 0V
VGS= ±20V, VDS= 0V
ID= -250µA, VDS= VGS
IGSS
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
-2.0
V
Static Drain-Source
V
GS= -10V, ID= -1.0A
0.170
0.250
0.235
0.320
RDS(on)
(a)
ꢀ
on-state resistance
VGS= -4.5V, ID= -0.5A
Forward
gfs
(a) (c)
4.7
S
VDS= -15V, ID= -2.1A
Transconductance
Dynamic
(c)
Capacitance
717
55
Input capacitance
Output capacitance
Ciss
pF
pF
VDS= -50V, VGS= 0V
f= 1MHz
Coss
Reverse transfer
capacitance
Crss
46
pF
(b) (c)
Switching
Turn-on-delay time
Rise time
4.3
5.2
20
ns
ns
ns
ns
td(on)
tr
td(off)
tf
V
DD= -50V, VGS= -10V
ID= -1A
Turn-off delay time
Fall time
RG 6.0Ω,
12
(c)
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
16.5
2.5
nC
nC
nC
Qg
VDS= -50V, VGS= -10V
ID= -2.1A
Qgs
Qgd
5.4
(a)
IS= -1.7A, VGS= 0V
Diode forward voltage
-0.85
43
-0.95
V
VSD
trr
(c)
ns
nC
Reverse recovery time
IS= -1.7A, di/dt= 100A/µs
(c)
77
Qrr
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.3 - March 2009
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ZXMC10A816N8
Q2 (P-channel) typical characteristics
10V
5V
10V
T = 150°C
T = 25°C
10
10
1
5V
4.5V
4V
4.5V
4V
3.5V
1
3V
3.5V
0.1
0.01
0.1
-VGS
-VGS
0.1
1
0.1
1
-VDS Drain-Source Voltage1(0V)
-VDS Drain-Source Voltage1(0V)
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = -10V
ID = - 2.1A
RDS(on)
T = 150°C
T = 25°C
1
VGS(th)
VGS = VDS
-VDS = 10V
ID = -250uA
3.0
3.5
4.0
4.5
5.0
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
3.5V
-VGS
T = 25°C
4V
10
1
1
T = 150°C
4.5V
5V
0.1
0.01
1E-3
T = 25°C
7V
10V
0.1
0.2
0.4
0.6
0.8
1.0
0.1
1
10
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXMC10A816N8
Q2 (P-channel) typical characteristics –continued
10
VGS = 0V
f = 1MHz
ID = -2.1A
1000
800
600
400
200
0
8
6
4
2
0
CISS
COSS
CRSS
VDS = -50V
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
50k
0.2F
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
Pulse width Ͻ 1S
Duty factor 0.1%
tr
td(off)
tr
td(on)
t(on)
t(on)
Switching time waveforms
Switching time test circuit
Issue 1.3 - March 2009
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ZXMC10A816N8
Packaging details - SO8
DIM
Inches
Min.
Millimeters
DIM
Inches
Min. Max.
0.050 BSC
Millimeters
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
θ
-
1.27 BSC
0.013
0.020
0.33
0.51
0.008
0.010
0.19
0.25
H
0°
-
8°
-
0°
-
8°
-
E
L
-
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMC10A816N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all
risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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