ZXMD63P03X [DIODES]
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET; 双路30V P沟道增强型MOSFET
| 型号： | ZXMD63P03X |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMD63P03X
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
• Low on-resistance
N-channel
P-channel
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Pin-out
ORDERING INFORMATION
DEVICE
REELSIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXMD63P03XTA
ZXMD63P03XTC
7
12 embossed
12 embossed
1,000
4,000
13
Top view
DEVICE MARKING
ZXM63P03
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
1
49
ZXMD63P03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
P-CHANNEL UNIT
Drain-Source Voltage
V
V
-30
V
V
DSS
GS
Gate- Source Voltage
Ϯ20
Continuous Drain Current
(V =4.5V; T =25°C)(b)(d)
I
2.0
1.6
A
A
GS
A
D
(V =4.5V; T =70°C)(b)(d)
GS
A
Pulsed Drain Current (c)(d)
I
I
I
-9.6
-1.4
-9.6
A
A
A
DM
S
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
SM
Power Dissipation at T =25°C (a)(d)
A
P
P
P
0.87
6.9
W
D
D
D
Linear Derating Factor
mW/°C
Power Dissipation at T =25°C (a)(e)
A
Linear Derating Factor
1.04
8.3
W
mW/°C
Power Dissipation at T =25°C (b)(d)
A
Linear Derating Factor
1.25
10
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
143
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
R
R
R
θJA
θJA
θJA
100
Junction to Ambient (a)(e)
NOTES
120
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
ZXMD63P03X
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
3
ZXMD63P03X
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
-30
V
I =-250µA, V =0V
(BR)DSS
D
GS
I
-1
V
=-30V, V =0V
GS
µA
nA
V
DSS
DS
GS
I
V
=Ϯ20V, V =0V
Ϯ100
GSS
DS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V
-1.0
I =-250µA, V =V
GS(th)
DS
GS
D
R
0.185
0.27
V
V
=-10V, I =-1.2A
Ω
Ω
DS(on)
GS
GS
D
=-4.5V, I =-0.6A
D
Forward Transconductance (3)
DYNAMIC (3)
g
0.92
S
V
=-10V,I =-0.6A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
C
C
C
270
80
pF
pF
pF
iss
V
=-25 V, V =0V,
DS
GS
oss
rss
f=1MHz
30
t
t
t
t
2.6
4.8
ns
ns
ns
ns
nC
nC
nC
d(on)
r
V
=-15V, I =-1.2A
D
DD
G
R =6.2Ω, R =6.2Ω
(Refer to test
circuit)
D
Turn-Off Delay Time
Fall Time
13.1
9.3
d(off)
f
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Q
Q
Q
7
1.2
2
g
V
=-24V,V =-10V,
GS
DS
gs
gd
ID=-1.2A
(Refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
-0.95
V
T =25°C, I =-1.2A,
j S
GS
SD
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
NOTES:
t
21.4
15.7
ns
T =25°C, I =-1.2A,
j F
di/dt= 100A/µs
rr
Q
nC
rr
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
ZXMD63P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
5
ZXMD63P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
6
ZXMD63P03X
PACKAGE DETAILS
PAD LAYOUT DETAILS
c
e
1.02
0.040
E1
E
4.8
0.189
R1
D
mm
inches
L
R
A
A2
0.41
0.65
0.023
0.016
A1
b
PACKAGE DIMENSIONS
DIM
Millimeters
MIN MAX
1.11
Inches
MIN
MAX
0.044
0.008
0.014
A
A1
B
0.91
0.10
0.25
0.13
2.95
0.036
0.004
0.010
0.005
0.116
0.20
0.36
C
0.18
3.05
0.65NOM
0.33NOM
2.95 3.05
5.03
0.007
0.120
0.0256
0.0128
0.116
0.188
0.016
0°
D
e
e1
E
0.120
0.198
0.026
6°
H
L
4.78
0.41
0°
0.66
6°
°
© Zetex Semiconductors plc 2005
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
7
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DIODES
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